MMBF5484LT1G

MMBF5484LT1
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4
f, FREQUENCY (MHz)
10
g
ig
@ I
DSS
f, FREQUENCY (MHz)
0.5
Figure 9. Input Admittance (y
ig
) Figure 10. Reverse Transfer Admittance (y
rg
)
COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS
(V
DG
= 15 Vdc, T
channel
= 25°C)
f, FREQUENCY (MHz) f, FREQUENCY (MHz)
Figure 11. Forward Transfer Admittance (y
fg
) Figure 12. Output Admittance (y
og
)
g
ig
, INPUT CONDUCTANCE (mmhos)
20
10
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20 30 50 70 100 200 300
500 700
1000
b
ig
, INPUT SUSCEPTANCE (mmhos)
g
fg
, FORWARD TRANSCONDUCTANCE (mmhos)
b
fg
, FORWARD SUSCEPTANCE (mmhos)
g
rg
, REVERSE TRANSADMITTANCE (mmhos)
b
rg
, REVERSE SUSCEPTANCE (mmhos)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
g
og
, OUTPUT ADMITTANCE (mmhos)
b
og
, OUTPUT SUSCEPTANCE (mmhos)
0.3
0.01
0.1
0.2
10 20 30 50 70 100 200 300
500 700
1000
10 20 30 50 70 100 200 300
500 700
1000
0.01
0.02
0.03
0.3
10 20 30 50 70 100 200 300
500 700
1000
b
ig
@ 0.25 I
DSS
b
ig
@ I
DSS
g
rg
@ 0.25 I
DSS
g
fg
@ I
DSS
g
fg
@ 0.25 I
DSS
b
rg
@ 0.25 I
DSS
b
og
@ I
DSS
, 0.25 I
DSS
g
og
@ I
DSS
g
og
@ 0.25 I
DSS
0.2 0.005
0.007
0.02
0.03
0.05
0.07
0.1
0.05
0.07
0.1
0.2
0.5
0.7
1.0
b
rg
@ I
DSS
0.25 I
DSS
g
ig
@ I
DSS
, 0.25 I
DSS
b
fg
@ I
DSS
MMBF5484LT1
http://onsemi.com
5
0° 350° 340° 330°10°20°30°
180° 190° 200° 210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0° 350° 340° 330°10°20°30°
180° 190° 200° 210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0° 350° 340° 330°10°20°30°
180° 190° 200° 210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0° 350° 340° 330°10°20°30°
180° 190° 200° 210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
Figure 13. S
11g
Figure 14. S
12g
Figure 15. S
21g
Figure 16. S
22g
0.7
0.6
0.5
0.4
0.3
0.04
0.5
0.4
0.3
0.2
1.0
0.9
0.8
0.7
0.6
0.03
0.02
0.01
0.0
0.01
0.02
0.03
0.04
0.1
900
900
800
700
600
500
300
200
100
800
700
600
500
400
300
200
100
I
D
= 0.25 I
DSS
I
D
= I
DSS
100
200
300
400
500
600
700
800
900
900
600
700
800
I
D
= 0.25 I
DSS
I
D
= I
DSS
100
900
100
900
I
D
= 0.25 I
DSS
I
D
= I
DSS
1.5
100
400
500
600
700
800 900
I
D
= I
DSS
, 0.25 I
DSS
COMMON GATE CHARACTERISTICS
S−PARAMETERS
(V
DS
= 15 Vdc, T
channel
= 25°C, Data Points in MHz)
MMBF5484LT1
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6
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
ǒ
mm
inches
Ǔ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
VIEW C
L
0.25
L1
q
e
E
E
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b 0.37 0.44 0.50 0.015
c 0.09 0.13 0.18 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
H
E
0.35 0.54 0.69 0.014 0.021 0.029
c
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
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MMBF5484LT1/D
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MMBF5484LT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
JFET 25V 10mA
Lifecycle:
New from this manufacturer.
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