Vishay Siliconix
SUD50N10-18P-GE3
Document Number: 65717
S12-1958-Rev. C, 13-Aug-12
www.vishay.com
5
This document is subject to change without notice.
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
** The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Safe Operating Area, Junction-to-Ambient
Current Derating**, Junction-to-Ambient
- Drain Current (A)
I
D
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
0.1 1 10 100 1000
1000
10
0.01
1
100
T
A
= 25 °C
Single Pulse
100 ms
0.1
1ms
10 ms
100 s, DC
1s
10 s
Limited byR
DS(on)*
BVDSS Limited
10 µs
100 µs
T
A
-Ambient Temperature (°C)
I
D
- Drain Current (A)
0
2
4
6
8
10
0 25 50 75 100 125 150
Safe Operating Area, Junction-to-Case
Current Derating**, Junction-to-Case
0.01
0.1
1
10
100
1000
0.1 1.0 10 100 1000
- Drain Current (A)
I
D
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
T
C
= 25 °C
Single Pulse
10 µs
100 µs
1ms
10 ms
100 ms, DC
Limited byR
DS(on)*
BVDSS Limited
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
0
10
20
30
40
50
60
0 25 50 75 100 125 150
Package Limited
