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MRFE6S9205HR5

P1-P3P4-P6P7-P9P10-P12
MRFE6S9205HR3 MRFE6S9205HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large-signal, common-source amplifier
applications in 28 volt base station equipment.
• Typical Single-Carrier W -CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1400 mA, P
out
= 58 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 21.2 dB
Drain Efficiency — 34%
Device Output Signal PAR — 6.3 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — -39.1 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz,
P
out
= 260 W CW
(3 dB Input Overdrive from Rated P
out
), Designed for Enhanced Ruggedness
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
DD
Operation
• Integrated ESD Protection
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DSS
-0.5, +66 Vdc
Gate-Source Voltage V
GS
-0.5, +12 Vdc
Storage Temperature Range T
stg
- 65 to +150 °C
Case Operating Temperature T
C
150 °C
Operating Junction Temperature
(1,2)
T
J
225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 202 W CW
Case Temperature 77°C, 58 W CW
R
θ
JC
0.27
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access the MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MRFE6S9205HR3
MRFE6S9205HSR3
880 MHz, 58 W AVG., 28 V
SINGLE W-CDMA
LATERAL N -CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRFE6S9205HSR3
CASE 465B-03, STYLE 1
NI-880
MRFE6S9205HR3
Document Number: MRFE6S9205H
Rev. 0, 10/2007
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2007. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRFE6S9205HR3 MRFE6S9205HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) Class 1C (Minimum)
Machine Model (per EIA/JESD22-A115) Class B (Minimum)
Charge Device Model (per JESD22-C101) Class IV (Minimum)
Table 4. Electrical Characteristics (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 1 µAdc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
— — 10 µAdc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 600 µAdc)
V
GS(th)
1.4 2.1 2.9 Vdc
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1400 mAdc, Measured in Functional Test)
V
GS(Q)
2.2 2.9 3.7 Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 4.2 Adc)
V
DS(on)
0.1 0.2 0.3 Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
— 1.63 — pF
Output Capacitance
(V
DS
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
— 590 — pF
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
C
iss
— 491 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, P
out
= 58 W Avg. W - CDMA, f = 880 MHz,
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain G
ps
20 21.2 23 dB
Drain Efficiency η
D
32 34 — %
Output Peak - to -Average Ratio @ 0.01% Probability on CCDF PAR 6 6.3 — dB
Adjacent Channel Power Ratio ACPR — -39.1 -37.5 dBc
Input Return Loss IRL — -12.5 -8.5 dB
1. Part is internally matched on input.
(continued)
MRFE6S9205HR3 MRFE6S9205HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (T
C
= 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, 865-900 MHz Bandwidth
Video Bandwidth @ 220 W PEP P
out
where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW) ∆IMD3 = IMD3 @ VBW
frequency - IMD3 @ 100 kHz <1 dBc (both sidebands)
VBW
— 10 —
MHz
Gain Flatness in 35 MHz Bandwidth @ P
out
= 58 W Avg. G
F
— 0.315 — dB
Average Deviation from Linear Phase in 35 MHz Bandwidth
@ P
out
= 200 W CW
Φ — 0.59 — °
Average Group Delay @ P
out
= 200 W CW, f = 880 MHz Delay — 4.27 — ns
Part-to-Part Insertion Phase Variation @ P
out
= 200 W CW,
f = 880 MHz, Six Sigma Window
∆Φ — 26.3 — °
Gain Variation over Temperature
(-30°C to +85°C)
∆G — 0.016 — dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
∆P1dB — 0.006 — dBm/°C
P1-P3P4-P6P7-P9P10-P12

MRFE6S9205HR5

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Manufacturer:
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Description:
RF MOSFET Transistors HV6E 900MHZ 200W NI880S
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