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MRFE6S9205HR5

P1-P3P4-P6P7-P9P10-P12
4
RF Device Data
Freescale Semiconductor
MRFE6S9205HR3 MRFE6S9205HSR3
C5
+
C20
+
Figure 1. MRFE6S9205HR3(HSR3) Test Circuit Schematic
Z11 0.150″ x 0.980″ Microstrip
Z12 0.200″ x 0.980″ x 0.387″ Taper
Z13 0.115″ x 0.444″ Microstrip
Z14 0.140″ x 0.444″ x 0.110″ Taper
Z15 0.770″ x 0.110″ Microstrip
Z16 0.442″ x 0.065″ Microstrip
Z17 0.274″ x 0.065″ Microstrip
PCB Taconic RF35 0.030″, ε
r
= 3.5
Z1 0.263″ x 0.065″ Microstrip
Z2 0.310″ x 0.065″ Microstrip
Z3 0.711″ x 0.120″ Microstrip
Z4 0.199″ x 0.120″ Microstrip
Z5 0.263″ x 1.020″ x 0.120″ Taper
Z6 0.351″ x 1.020″ Microstrip
Z7 0.055″ x 1.020″ Microstrip
Z8, Z9 0.947″ x 0.120″ Microstrip
Z10 0.060″ x 0.980″ Microstrip
V
BIAS
V
SUPPLY
RF
OUTPUT
RF
INPUT
DUT
C6
Z3 Z4 Z5
C1
Z6
R2
Z8
Z7
Z11 Z12
C27
C21 C22 C23
C7
Z16 Z17
B1
Z10
Z9
Z1 Z2
C3 C4
R1
R3
Z14 Z15Z13
C24 C25 C26
V
SUPPLY
C15 C16 C17 C18 C19
C8 C9 C10 C11 C12 C13
C2
C14
+
Table 5. MRFE6S9205HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Short RF Bead 2743019447 Fair-Rite
C1, C7, C15, C16, C21,
C22, C27
39 pF Chip Capacitors ATC100B390JT500XT ATC
C2, C14 0.8-8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson
C3, C4 5.1 pF Chip Capacitors ATC100B5R1JT500XT ATC
C5 33 µF, 25 V Electrolytic Capacitor EMVY350ADA330MF55G Nippon Chemi-Con
C6, C17, C18, C19, C23,
C24, C25
10 µF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata
C8, C9, C10, C11, C12, C13 6.8 pF Chip Capacitors ATC100B6R8JT500XT ATC
C20, C26 470 µF, 63 V Electrolytic Capacitors EKME630ELL471MK255 United Chemi-Con
R1, R3 3.3 Ω, 1/3 W Chip Resistors CRCW12103R30FKEA Vishay
R2 2.2 kΩ, 1/4 W Chip Resistor CRCW12062K20FKEA Vishay
MRFE6S9205HR3 MRFE6S9205HSR3
5
RF Device Data
Freescale Semiconductor
C19
B1
C6
C5
C16
CUT OUT AREA
MRFE6S9205H
Rev. 1
+
R2
R3
C7
C4
C3
R1
C1
C2
C15
C18C17
C24C23
C21
C22
C25
C26
C27
C20
C9
C13
C12
C11
C10
C8
C14
Figure 2. MRFE6S9205HR3(HSR3) Test Circuit Component Layout
6
RF Device Data
Freescale Semiconductor
MRFE6S9205HR3 MRFE6S9205HSR3
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
η
D
PARC (dB)
IRL, INPUT RETURN LOSS (dB)
960
15
23
800
−2.5
36
IRL
G
ps
PARC
f, FREQUENCY (MHz)
Figure 3. Output Peak- to-Average Ratio Compression (PARC)
Broadband Performance @ P
out
= 58 Watts Avg.
V
DD
= 28 Vdc, P
out
= 58 W (Avg.)
I
DQ
= 1400 mA, Single−Carrier
W−CDMA, 3.84 MHz, Channel
Bandwidth, Input PAR = 7.5 dB
@ 0.01% Probability (CCDF)
−16
0
−4
−8
−12
G
ps
, POWER GAIN (dB)
940920900880860840820
16
17
18
19
20
21
22
34
32
30
−0.5
−1
−1.5
−2
η
D
, DRAIN
EFFICIENCY (%)
PARC (dB)
IRL, INPUT RETURN LOSS (dB)
η
D
960
14
22
800
−4
46
IRL
G
ps
PARC
f, FREQUENCY (MHz)
Figure 4. Output Peak- to-Average Ratio Compression (PARC)
Broadband Performance @ P
out
= 95 Watts Avg.
V
DD
= 28 Vdc, P
out
= 95 W (Avg.), I
DQ
= 1400 mA
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input PAR = 7.5 dB @ 0.01% Probability (CCDF)
−15
0
−5
−10
G
ps
, POWER GAIN (dB)
21
20
19
18
17
16
15
820 840 860 880 900 920 940
44
42
40
−2
−2.5
−3
−3.5
400
17
23
1
1750 mA
I
DQ
= 2100 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two-Tone Power Gain versus
Output Power
V
DD
= 28 Vdc, f1 = 875 MHz, f2 = 885 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
G
ps
, POWER GAIN (dB)
1400 mA
700 mA
1050 mA
10 100
18
19
20
21
22
400
−60
0
1
1050 mA
I
DQ
= 700 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
V
DD
= 28 Vdc, f1 = 875 MHz, f2 = 885 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
2100 mA
1750 mA
10 100
−10
−20
−30
−40
−50
1400 mA
P1-P3P4-P6P7-P9P10-P12

MRFE6S9205HR5

Mfr. #:
Buy MRFE6S9205HR5
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV6E 900MHZ 200W NI880S
Lifecycle:
New from this manufacturer.
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