August 2010 Doc ID 15583 Rev 3 1/11
11
ESDALC6V1-1BU2
Single-line low capacitance Transil™
for bidirectional ESD protection
Features
Breakdown voltage V
BR
= 6.1 V min.
Bidirectional device
Multiple ESD strike sustainability
Very low diode capacitance: 5 pF typ. at 0 V
Low leakage current
0201 SMD package size compatible
Ultra small PCB area: 0.18 mm
2
RoHS compliant
Benefits
High ESD protection level
High integration
Suitable for high density boards
MSL1
Complies with the following standards:
IEC 61000-4-2 level 4
15 kV (air discharge)
8 kV (contact discharge)
Applications
Where transient overvoltage protection in ESD
sensitive equipment is required, such as:
Portable multimedia players and accessories
Notebooks
Digital cameras and camcorders
Communication systems
Cellular phone handsets and accessories
Figure 1. Functional diagram (top view)
Description
The ESDALC6V1-1BU2 is a bidirectional single
line TVS diode designed to protect data lines or
other I/O ports against ESD transients.
The device is ideal for applications where both
reduced line capacitance and board space saving
are required.
TM: Transil is a trademark of STMicroelectronics
Pin 1 available in different forms
ST0201 package
www.st.com
Characteristics ESDALC6V1-1BU2
2/11 Doc ID 15583 Rev 3
1 Characteristics
Figure 2. Electrical characteristics (definitions)
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
V
PP
Peak pulse voltage:
IEC 61000-4-2 contact discharge
EC 61000-4-2 air discharge
±8
±15
kV
I
PP
Peak pulse current (8/20 µs) 1.5 A
T
stg
Storage temperature range - 55 to +150 °C
T
L
Maximum lead temperature for soldering during 10 s 260 °C
T
op
Operating junction temperature range -40 to +125 °C
Symbol Parameter
V = Breakdown voltage
I = Leakage current @ V
V = Stand-off voltage
I = Forward current
I = Peak pulse current
I = Breakdown current
V = Forward voltage drop
R
BR
RM RM
RM
PP
R
F
V = Clamping voltage
CL
F
d
= Dynamic impedance
T = Voltage temperaturea
Table 2. Electrical characteristics (values, T
amb
= 25 °C)
Symbol Test conditions Min. Typ. Max. Unit
V
BR
I
R
= 1 mA 6.1 - - V
I
RM
V
RM
= 3 V --100nA
R
d
Square pulse, I
PP
= 1 A t
p
= 2.5 µs - 2.5 - Ω
αT ΔV
BR
= αT(T
amb
- 25 °C) x V
BR
(25 °C) - - 6 10
-4
/°C
C
line
V
R
= 0 V, F
osc
= 1 MHz, V
osc
= 30 mV - 5 - pF
ESDALC6V1-1BU2 Characteristics
Doc ID 15583 Rev 3 3/11
Figure 3. Relative variation of peak pulse
power versus initial junction
temperature
Figure 4. Peak pulse power versus
exponential pulse duration
P
PP
[T
j
initial] / P
PP
[T
j
initial=25°C]
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0 25 50 75 100 125 150
T
j
(°C)
P
PP
(W)
10
100
1000
1 10 100 1000
T
j
initial = 25°C
t
P
(µs)
Figure 5. Junction capacitance versus
reverse applied voltage (typical
values)
Figure 6. Relative variation of leakage
current versus junction
temperature (typical values)
C(pF)
0
1
2
3
4
5
-5.0
-4.0
-3.0
-2.0
-1.0
0.0
1.0
2.0
3.0
4.0
5.0
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
V
R
(V)
I
R
[T
j
]/I
R
[T
j
=25°C]
1
10
100
25 50 75 100 125
V
R
=3V
T
j
(°C)
Figure 7. ESD response to IEC 61000-4-2
(+8 kV contact discharge)
Figure 8. ESD response to IEC 61000-4-2
(-8 kV contact discharge)
10 V/Div
20 ns/Div
10 V/Div
20 ns/Div

1.5KE110-B

Mfr. #:
Manufacturer:
Littelfuse
Description:
TVS Diodes / ESD Suppressors 1500W 110V Uni-Directional
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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