NB6L14SMNTXG

NB6L14S
http://onsemi.com
4
Table 5. DC CHARACTERISTICS V
CC
= 2.375 V to 2.625 V, GND = 0 V, T
A
= 40°C to +85°C
Symbol
Characteristic Min Typ Max Unit
I
CC
Power Supply Current (Note 9) 65 100 mA
DIFFERENTIAL INPUTS DRIVEN SINGLEENDED (Figures 17, 18, 22, and 24)
V
th
Input Threshold Reference Voltage Range (Note 8) GND +100 V
CC
100 mV
V
IH
Singleended Input HIGH Voltage V
th
+ 100 V
CC
mV
V
IL
Singleended Input LOW Voltage GND V
th
100 mV
V
REFAC
Reference Output Voltage (Note 11) V
CC
1.600 V
CC
1.425 V
CC
1.300 V
DIFFERENTIAL INPUTS DRIVEN DIFFERENTIALLY (Figures 10, 12, NO TAG, NO TAG, 23, and 25)
V
IHD
Differential Input HIGH Voltage 100 V
CC
mV
V
ILD
Differential Input LOW Voltage GND V
IHD
100 mV
V
CMR
Input Common Mode Range (Differential Configuration) GND + 50 V
CC
50 mV
V
ID
Differential Input Voltage (V
IHD
V
ILD
) 100 V
CC
mV
R
TIN
Internal Input Termination Resistor 40 50 60
W
LVDS OUTPUTS (Note 5)
V
OD
Differential Output Voltage 250 450 mV
DV
OD
Change in Magnitude of V
OD
for Complementary Output States
(Note 10)
0 1 25 mV
V
OS
Offset Voltage (Figure 21) 1125 1375 mV
DV
OS
Change in Magnitude of V
OS
for Complementary Output States
(Note 10)
0 1 25 mV
V
OH
Output HIGH Voltage (Note 6) 1425 1600 mV
V
OL
Output LOW Voltage (Note 7) 900 1075 mV
LVTTL/LVCMOS INPUT, EN
V
IH
Input HIGH Voltage 2.0 V
CC
V
V
IL
Input LOW Voltage GND 0.8 V
I
IH
Input HIGH Current 150 150
mA
I
IL
Input LOW Current 150 150
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
5. LVDS outputs require 100 W receiver termination resistor between differential pair. See Figure 20.
6. V
OH
max = V
OS
max + ½ V
OD
max.
7. V
OL
max = V
OS
min ½ V
OD
max.
8. V
th
is applied to the complementary input when operating in singleended mode.
9. Input termination pins open at the DC level within V
CMR
and output pins loaded with R
L
= 100 W across differential.
10.Parameter guaranteed by design verification not tested in production.
11. V
REFAC
used to rebias capacitorcoupled inputs only (see Figures 17 and 18).
NB6L14S
http://onsemi.com
5
Table 6. AC CHARACTERISTICS V
CC
= 2.375 V to 2.625 V, GND = 0 V; (Note 12)
Symbol
Characteristic
40°C to +85°C
Unit
Min Typ Max
f
inMax
Maximum Input Clock Frequency 2.0 GHz
V
OUTPP
Output Voltage Amplitude (@ V
INPPmin
)f
in
1.0 GHz
(Figure 4) f
in
= 1.5 GHz
f
in
= 2.0 GHz
220
200
170
350
300
270
mV
f
DATA
Maximum Operating Data Rate 2.5 Gb/s
t
PLH
,
t
PHL
Differential Input to Differential Output, IN to Q
Propagation Delay @ 100 MHz
300 450 600 ps
t
s
t
h
Setup Time EN to IN/IN
Hold Time
300
500
20
20
t
SKEW
Within Device Skew (Note 17)
DevicetoDevice Skew (Note 16)
5
30
20
200
ps
t
JITTER
RMS Random Clock Jitter (Note 14) f
in
= 2.0 GHz
Deterministic Jitter (Note 15) f
DATA
v 2.488 Gb/s
0.5
5.0
0.8
20
ps
V
INPP
Input Voltage Swing/Sensitivity
(Differential Configuration) (Note 13)
100 V
CC
GND mV
t
r
t
f
Output Rise/Fall Times @ 250 MHz Q, Q
(20% 80%)
70 150 225 ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
12.Measured by forcing V
INPPmin
with 50% duty cycle clock source and V
CC
1400 mV offset. All loading with an external R
L
= 100 W. Input
edge rates 150 ps (20%80%). See Figure 20.
13.Input voltage swing is a singleended measurement operating in differential mode.
14.RMS jitter with 50% Duty Cycle clock signal at 750 MHz.
15.Deterministic jitter with input NRZ data at PRBS 2
23
1 and K28.5.
16.Skew is measured between outputs under identical transition @ 250 MHz.
17.The worst case condition between Q0/Q0
and Q1/Q1 from either D0/D0 or D1/D1, when both outputs have the same transition.
INPUT CLOCK FREQUENCY (GHz)
Figure 4. Output Voltage Amplitude (V
OUTPP
) versus
Input Clock Frequency (f
in
) and Temperature (@ V
CC
= 2.5 V)
OUTPUT VOLTAGE AMPLITUDE (mV)
0
50
100
150
200
250
300
350
400
0.5 1 1.5 2 2.5 30
NB6L14S
http://onsemi.com
6
Figure 5. Typical Phase Noise Plot at
f
carrier
= 311.04 MHz
Figure 6. Typical Phase Noise Plot at
f
carrier
= 622.08 MHz
Figure 7. Typical Phase Noise Plot at
f
carrier
= 1 GHz
Figure 8. Typical Phase Noise Plot at
f
carrier
= 1.5 GHz
The above phase noise plots captured using Agilent
E5052A show additive phase noise of the NB6L14S device
at frequencies 311.04 MHz, 622.08 MHz, 1 GHz and
1.5 GHz respectively at an operating voltage of 2.5 V in
room temperature. The RMS Phase Jitter contributed by the
device (integrated between 12 kHz and 20 MHz; as shown
in the shaded region of the plot) at each of the frequencies
is 65 fs, 29 fs, 24 fs and 20 fs respectively. The input source
used for the phase noise measurements is Agilent E8663B.

NB6L14SMNTXG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Clock Buffer CZ4 DIFF IN LVDS OUT
Lifecycle:
New from this manufacturer.
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