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UCLAMP5612T.TNT

P1-P3P4-P6P7-P9
4© 2012 Semtech Corporation
www.semtech.com
PROTECTION PRODUCTS
uClamp5612T
Non-Repetitive Peak Pulse Power vs. Pulse Time
(VBatt)
Clamping Voltage vs. Peak Pulse Current (tp=8/20us)
Typical Characteristics
0.01
0.1
1
10
0.1 1 10 100
Pulse Duration - tp (μs)
Peak Pulse Power - P
PP
(kW)
Junction Capacitance vs. Reverse Voltage
Non-Repetitive Peak Pulse Power vs. Pulse Time
(Batt_Therm, Batt_ID)
0.01
0.1
1
0.1 1 10 100
Pulse Duration - tp (μs)
Peak Pulse Power - P
PP
(kW)
Normalized Leakage Current (IR) vs. Temperature Breakdown Voltage (VBR) vs. Temperature
0
5
10
15
20
-40 -15 10 35 60 85
Temperature (
o
C)
Breakdown Voltage - V
BR
(V) @ I
t
= 1mA
Batt_Therm , Batt_ID
VBatt
0
0.5
1
1.5
2
2.5
3
3.5
4
0255075100125
Temperature (
o
C)
IR (T) / IR @ T=25
o
C
VBatt
Batt_Therm , Batt_ID
0
10
20
30
40
50
60
70
80
90
100
024681012
Reverse Voltage - V
R
(V)
Capacitance - C
j
(pF)
f = 1 MHz
Batt_Therm , Batt_ID
VBatt
0
5
10
15
20
25
30
0246810
Peak Pulse Current - I
PP
(A)
Clamping Voltage - V
C
(V)
Waveform
Parameters:
tr = 8ȝs
td = 20ȝs
VBatt
Batt_Therm , Batt_ID
5© 2012 Semtech Corporation
www.semtech.com
PROTECTION PRODUCTS
uClamp5612T
Typical Characteristics
ESD Clamping (+8kV Contact per IEC 61000-4-2)
VBatt Pin (Pin 1)
ESD Clamping +8kV Contact per IEC 61000-4-2)
Batt_Therm, Batt_ID Pins (Pins 3, 4)
ESD Clamping (-8kV Contact per IEC 61000-4-2)
VBatt Pin (Pin 1)
ESD Clamping -8kV Contact per IEC 61000-4-2)
Batt_Therm, Batt_ID Pins (Pins 3, 4)
TLP Characteristic (Positive) TLP Characteristic (Negative)
-35
-30
-25
-20
-15
-10
-5
0
5
10
-10 0 10 20 30 40 50 60 70 80
Time (ns)
Voltage (V)
-5
0
5
10
15
20
25
30
35
40
45
-10 0 10 20 30 40 50 60 70 80
Time (ns)
Voltage (V)
-35
-30
-25
-20
-15
-10
-5
0
5
-10 0 10 20 30 40 50 60 70 80
Time (ns)
Voltage (V)
0
10
20
30
40
50
60
-10 0 10 20 30 40 50 60 70 80
Time (ns)
Voltage (V)
0
5
10
15
20
25
30
0 5 10 15 20 25
TLP Voltage (V)
TLP Current (A)
TLP
Parameters:
tp = 100ns
tr = 200ps
Batt_Therm, Batt_ID
R
DYN
= 0.11 Ohms
VBatt
R
DYN
= 0.25 Ohms
-30
-25
-20
-15
-10
-5
0
-6 -5 -4 -3 -2 -1 0
TLP Voltage (V)
TLP Current (A)
Batt_Therm, Batt_ID
R
DYN
= 0.10 Ohms
VBatt
R
DYN
= 0.15 Ohms
TLP
Parameters:
tp = 100ns
tr = 200ps
6© 2012 Semtech Corporation
www.semtech.com
PROTECTION PRODUCTS
uClamp5612T
Typical Characteristics
Typical Insertion Loss S21
VBus Pin (Pin 1)
1
2
3
4
5
START
.
030 MHz
3STOP 000.000000 MHz
CH1 S21 LOG 6 dB / REF 0 dB
1: - 23.127 dB
800 MHz
2: - 28.838 dB
900 MHz
3: - 15.515 dB
1.8 GHz
4: - 17.196 dB
2.5 GHz
5: - 18.030 dB
2.7 GHz
0 dB
-6 dB
-12 dB
-18 dB
-24 dB
-30 dB
-36 dB
1
GHz
100
MHz
3
GHz
10
MHz
1
MHz
-42 dB
-48 dB
1
2
3
4
5
START
.
030 MHz
3STOP 000.000000 MHz
CH1 S21 LOG 6 dB / REF 0 dB
1: - 32.303 dB
800 MHz
2: - 24.740 dB
900 MHz
3: - 12.240 dB
1.8 GHz
4: - 13.658 dB
2.5 GHz
5: - 13.972 dB
2.7 GHz
0 dB
-6 dB
-12 dB
-18 dB
-24 dB
-30 dB
-36 dB
1
GHz
100
MHz
3
GHz
10
MHz
1
MHz
-42 dB
-48 dB
Typical Insertion Loss S21
Batt_ID, Batt Pins (Pins 3, 4)
Device Connection Options
The Clamp5612T is designed to protect two data lines
operating up to 5 volts and one voltage supply line
operating up to 12 volts. It is specifically designed for
protection of battery interfaces in mobile phones. The
12 volt TVS is located at pin 1. The 5 volt TVS diodes
are located at pins 3 and 4. Pin 2 is not internally
connected. Ground is provided at pin 5. Multiple
micro vias connected to ground are recommended for
best ESD performance. This will reduce parasitic
inductance in the ground path and minimize the
clamping voltage seen by the protected device.
Applications Information
Pin Configuration
PCB Layout Example
1VBatt
GND
NC
Batt_ID
2
Batt_Therm
P1-P3P4-P6P7-P9

UCLAMP5612T.TNT

Mfr. #:
Buy UCLAMP5612T.TNT
Manufacturer:
Semtech
Description:
TVS Diodes / ESD Suppressors UCLAMP5612T 3 LINE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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