OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

AUIRGS4062D1

P1-P3P4-P6P7-P9P10-P12P13-P15
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
V
CES
= 600V
I
C(Nominal)
= 24A
t
SC
≥ 5μs, T
J(max)
= 175°C
V
CE(on)
typ. = 1.57V
Features
• Low V
CE (on)
Trench IGBT Technology
• Low Switching Losses
• 5μs SCSOA
• Square RBSOA
• 100% of The Parts Tested for I
LM
• Positive V
CE (on)
Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free, RoHS Compliant
• Automotive Qualified *
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low V
CE (ON)
and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and
still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified
*Qualification standards can be found at http://www.irf.com/
TO-220AB
AUIRGB4062D1
E
G
n-channel
C
Applications
• Air Conditioning Compressor
D
2
Pak
AUIRGS4062D1
C
E
G
GC E
Gate Collector Emitter
TO-262
AUIRGSL4062D1
C
G
C
E
C
G
C
E
AUTOMOTIVE GRADE
AUIRGB4062D1
AUIRGS4062D1
AUIRGSL4062D1
1 www.irf.com © 2013 International Rectifier May 02, 2013
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 59
I
C
@ T
C
= 100°C Continuous Collector Current 39
I
NOMINAL
Nominal Current 24
I
CM
Pulse Collector Current, V
GE
= 15V
72
I
LM
Clamped Inductive Load Current, V
GE
= 20V
96 A
I
F
@ T
C
= 25°C Diode Continous Forward Current 59
I
F
@ T
C
= 100°C Diode Continous Forward Current 39
I
FM
Diode Maximum Forward Current
96
V
GE
Continuous Gate-to-Emitter Voltage ±20
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C Maximum Power Dissipation 246
P
D
@ T
C
= 100°C Maximum Power Dissipation 123
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. (1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θ
JC
(IGBT)
Thermal Resistance Junction-to-Case (IGBT)
––– ––– 0.61
R
θ
JC
(Diode)
Thermal Resistance Junction-to-Case (Diode)
––– ––– 1.2
R
θ
CS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.50 –––
R
θ
JA
Thermal Resistance, Junction-to-Ambient
––– 62 –––
-55 to +175
V
W
°C/W
Base part number
Package Type
Standard Pack
Complete Part Number
Form
Quantity
AUIRGB4062D1
Tube
50
AUIRGB4062D1
AUIRGSL4062D1
Tube
50
AUIRGSL4062D1
AUIRGS4062D1 D2Pak Tube 50 AUIRGS4062D1
Tape and Reel Left 800 AUIRGS4062D1TRL
Tape and Reel Right 800 AUIRGS4062D1TRR
Ordering Information
2 www.irf.com © 2013 International Rectifier May 02, 2013
AUIRGB/S/SL4062D1
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 210μH, R
G
= 50Ω.
Pulse width limited by max. junction temperature.
R
θ
is measured at T
J
of approximately 90°C.
Maximum limits are based on statistical sample size characterization.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V V
GE
= 0V, I
C
= 100μA
Δ
V
(BR)CES
/
Δ
T
J
Temperature Coeff. of Breakdown Voltage — 0.3 — V/°C V
GE
= 0V, I
C
= 10mA (25°C-175°C)
—1.571.77 I
C
= 24A, V
GE
= 15V, T
J
= 25°C
V
CE(on)
Collector-to-Emitter Saturation Voltage — 1.87 — I
C
= 24A, V
GE
= 15V, T
J
= 150°C
—1.94— I
C
= 24A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 4.0 — 6.5 V V
CE
= V
GE
, I
C
= 700μA
Δ
V
GE(th)
/
Δ
TJ Threshold Voltage temp. coefficient — -17 — mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
gfe Forward Transconductance — 12 — S V
CE
= 50V, I
C
= 24A, PW = 20μs
I
CES
Collector-to-Emitter Leakage Current — 1.0 25 μAV
GE
= 0V, V
CE
= 600V
—3.5—mAV
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
FM
Diode Forward Voltage Drop — 1.57 — I
F
= 24A
—1.40— I
F
= 19A
—1.47— I
F
= 24A, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) — 51 77 I
C
= 24A
Q
ge
Gate-to-Emitter Charge (turn-on) — 14 21 nC V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) — 21 32 V
CC
= 400V
E
on
Turn-On Switching Loss — 532 754 I
C
= 24A, V
CC
= 400V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 311 526 μJR
G
= 10
Ω
, L = 210μH, T
J
= 25°C
E
total
Total Switching Loss — 843 1280 Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 19 36 I
C
= 24A, V
CC
= 400V, V
GE
= 15V
t
r
Rise time — 24 41 ns R
G
= 10
Ω
, L = 210μH, T
J
= 25°C
t
d(off)
Turn-Off delay time — 90 109
t
f
Fall time — 23 40
E
on
Turn-On Switching Loss — 726 — I
C
= 24A, V
CC
= 400V, V
GE
=15V
E
off
Turn-Off Switching Loss — 549 — μJR
G
=10
Ω
, L= 210μH,T
J
= 175°C
E
total
Total Switching Loss — 1275 — Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 12 — I
C
= 24A, V
CC
= 400V, V
GE
= 15V
t
r
Rise time — 23 — ns R
G
= 10
Ω
, L = 200μH, L
S
= 150nH
t
d(off)
Turn-Off delay time — 92 — T
J
= 175°C
t
f
Fall time — 84 —
C
ies
Input Capacitance — 1487 — V
GE
= 0V
C
oes
Output Capacitance — 118 — V
CC
= 30V
C
res
Reverse Transfer Capacitance — 44 — f = 1.0Mhz
T
J
= 175°C, I
C
= 96A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 480V, Vp 600V
Rg = 10
Ω
, V
GE
= +20V to 0V
SCSOA Short Circuit Safe Operating Area V
CC
= 400V, Vp 600V
Rg = 10
Ω
, V
GE
= +15V to 0V
Erec Reverse Recovery Energy of the Diode — 773 — μJT
J
= 175°C
t
rr
Diode Reverse Recovery Time — 102 — ns V
CC
= 400V, I
F
= 24A
I
rr
Peak Reverse Recovery Current — 32 — A V
GE
= 15V, Rg = 10Ω, L =210μH
V
pF
Conditions
5——μs
V
3 www.irf.com © 2013 International Rectifier May 02, 2013
AUIRGB/S/SL4062D1
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
T
C
= 25°C, T
J
≤ 175°C; V
GE
=15V
Fig. 4 - Reverse Bias SOA
T
J
= 175°C; V
GE
= 20V
Fig. 5 - Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20μs
Fig. 6 - Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20μs
25 50 75 100 125 150 175
T
C
(°C)
0
10
20
30
40
50
60
70
I
C
(
A
)
25 50 75 100 125 150 175
T
C
(°C)
0
50
100
150
200
250
300
P
t
o
t
(
W
)
1 10 100 1000
V
CE
(V)
0.1
1
10
100
I
C
(
A
)
1msec
10μsec
100μsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
10 100 1000
V
CE
(V)
1
10
100
1000
I
C
(
A
)
0 1 2 3 4 5 6 7 8 9 10
V
CE
(V)
0
20
40
60
80
100
I
C
E
(
A
)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 11V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
0 2 4 6 8 10
V
CE
(V)
0
10
20
30
40
50
60
70
80
90
100
I
C
E
(
A
)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 11V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
P1-P3P4-P6P7-P9P10-P12P13-P15

AUIRGS4062D1

Mfr. #:
Buy AUIRGS4062D1
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors Automotive 600V Ultra IGBT D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet