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AUIRGS4062D1
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
4
www.irf.com
©
2013 International Rectifier
May
02,
2013
AUIRGB/S/SL4062D1
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 20
μ
s
Fig. 8
- Typ. Diode Forward Characteristics
tp = 20
μ
s
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20
μ
s
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
5
1
01
52
0
V
GE
(V)
0
2
4
6
8
V
C
E
(
V
)
I
CE
= 12A
I
CE
= 24A
I
CE
= 48A
5
1
01
52
0
V
GE
(V)
0
2
4
6
8
V
C
E
(
V
)
I
CE
= 12A
I
CE
= 24A
I
CE
= 48A
5
1
01
52
0
V
GE
(V)
0
2
4
6
8
V
C
E
(
V
)
I
CE
= 12A
I
CE
= 24A
I
CE
= 48A
0
1
2
3
4
5
6
7
8
9
10
V
CE
(V)
0
20
40
60
80
100
I
C
E
(
A
)
VGE = 18
V
VGE = 15
V
VGE = 12
V
VGE = 11
V
VGE = 10
V
VGE = 9.0
V
VGE = 8.0
V
VGE = 7.0
V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
F
(V)
0
20
40
60
80
100
I
F
(
A
)
T
J
= -
40°
C
T
J
= 25°
C
T
J
=175°
C
2
4
6
8
10
12
14
16
V
GE,
Gate
-to
-Emitter Vo
lta
ge
(V)
0
20
40
60
80
100
I
C
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
5
www.irf.com
©
2013 International Rectifier
May
02,
2013
AUIRGB/S/SL4062D1
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 210
μ
H; V
CE
= 400V, R
G
= 10
Ω
; V
GE
= 15V
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 210
μ
H; V
CE
= 400V, R
G
= 10
Ω
; V
GE
= 15V
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 210
μ
H;
V
CE
= 400V, I
CE
= 24A; V
GE
= 15V
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 210
μ
H; V
CE
= 400V, I
CE
= 24A; V
GE
= 15V
Fig. 17
- Typ. Diode I
RR
vs. I
F
T
J
= 175°C
Fig. 18
- Typ. Diode I
RR
vs. R
G
T
J
= 175°C
0
1
02
03
04
05
0
I
C
(A)
0
500
1000
1500
2000
2500
E
n
e
r
g
y
(
μ
J
)
E
OFF
E
ON
0
10
20
30
40
50
I
C
(A)
1
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0
20
40
60
80
100
120
R
G
(
Ω
)
0
400
800
1200
1600
2000
E
n
e
r
g
y
(
μ
J
)
E
OFF
E
ON
0
20
40
60
80
100
R
G
(
Ω
)
1
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
10
15
20
25
30
35
40
45
50
I
F
(A
)
5
10
15
20
25
30
35
I
R
R
(
A
)
R
G =
22
Ω
R
G =
47
Ω
R
G =
10
Ω
R
G =
100
Ω
0
20
40
60
80
100
R
G
(
Ω)
10
15
20
25
30
35
I
R
R
(
A
)
6
www.irf.com
©
2013 International Rectifier
May
02,
2013
AUIRGB/S/SL4062D1
Fig. 19
- Typ. Diode I
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V; I
F
= 24A; T
J
= 175°C
Fig. 20
- Typ. Diode Q
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V; T
J
= 175°C
Fig. 23
- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 24
- Typical Gate Charge
vs. V
GE
I
CE
= 24A; L = 585
μ
H
Fig. 21
- Typ. Diode E
RR
vs. I
F
T
J
= 175°C
Fig. 22
- V
GE
vs. Short Circuit Time
V
CC
= 400V; T
C
= 25°C
0
200
400
600
800
1000
1200
di
F
/dt (
A/
μ
s)
15
20
25
30
35
I
R
R
(
A
)
200
400
600
800
1000
1200
di
F
/dt (A/
μ
s)
1000
2000
3000
4000
5000
6000
Q
R
R
(
n
C
)
22Ω
10Ω
100Ω
47Ω
12A
48A
24A
10
20
30
40
50
I
F
(A
)
0
500
1000
1500
2000
E
n
e
r
g
y
(
μ
J
)
R
G
=
10
Ω
R
G
= 22
Ω
R
G
=
47
Ω
R
G
=
100
Ω
0
100
200
300
400
500
V
CE
(V)
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0
1
02
03
04
05
06
0
Q
G
, Tota
l Ga
te Ch
arg
e
(nC)
0
2
4
6
8
10
12
14
16
V
G
E
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V
CES
= 400V
V
CES
= 300V
8
1
01
21
41
61
8
V
GE
(V)
0
4
8
12
16
T
i
m
e
(
μ
s
)
50
100
150
200
250
C
u
r
r
e
n
t
(
A
)
T
sc
I
sc
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
AUIRGS4062D1
Mfr. #:
Buy AUIRGS4062D1
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors Automotive 600V Ultra IGBT D2PAK
Lifecycle:
New from this manufacturer.
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