IPB180N04S4LH0ATMA1

P1-P3 P4-P6 P7-P9

Data Sheet IPB180N04S4L-H0

OptiMOS

TM

-T2 Power-Transistor

Features

• N-channel Logic Level - Enhancement mode

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

C

=25°C, V

GS

=10V

1)

180 A

T

C

=100 °C,

V

GS

=10 V

2)

180

Pulsed drain current

2)

I

D,pulse

T

C

=25 °C

720

Avalanche energy, single pulse

E

AS

I

D

=90 A

850 mJ

Avalanche current, single pulse

I

AS

-

180 A

Gate source voltage

V

GS

- +20/-16 V

Power dissipation

P

tot

T

C

=25 °C

250 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

IEC climatic category; DIN IEC 68-1 - - 55/175/56

Value

V

DS

40

V

R

DS(on)

1.0

mΩ

I

D

180

A

Product Summary

PG-TO263-7-3

Type Package Marking

IPB180N04S4L-H0

PG-TO263-7-3

4N04LH0

R

ev. 1.0 page 1 2013-05-27

Data Sheet IPB180N04S4L-H0

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

2)

Thermal resistance, junction - case

R

thJC

---0.6K/W

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0 V, I

D

= 1 mA

40 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=180 µA

1.2 1.7 2.2

Zero gate voltage drain current

I

DSS

V

DS

=40 V, V

GS

=0 V,

T

j

=25 °C

-0.081µA

V

DS

=18 V, V

GS

=0 V,

T

j

=85 °C

2)

-120

Gate-source leakage current

I

GSS

V

GS

=20 V, V

DS

=0 V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=4.5 V, I

D

=50 A

-1.11.4

mΩ

V

GS

=10 V, I

D

=100 A

-0.81.0

Values

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ev. 1.0 page 2 2013-05-27

Data Sheet IPB180N04S4L-H0

Parameter Symbol Conditions Unit

min. typ. max.

D

y

namic characteristics

2)

Input capacitance

C

iss

- 18800 24440 pF

Output capacitance

C

oss

- 3070 3990

Reverse transfer capacitance

C

rss

- 160 370

Turn-on delay time

t

d(on)

-25-ns

Rise time

t

r

-30-

Turn-off delay time

t

d(off)

- 120 -

Fall time

t

f

- 100 -

Gate Char

g

e Characteristics

2)

Gate to source charge

Q

gs

-5268nC

Gate to drain charge

Q

gd

-2660

Gate charge total

Q

g

- 239 310

Gate plateau voltage

V

plateau

-2.8-V

Reverse Diode

Diode continous forward current

2)

I

S

- - 180 A

Diode pulse current

2)

I

S,pulse

- - 720

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=100 A,

T

j

=25 °C

-0.91.3V

Reverse recovery time

2)

t

rr

-80-ns

Reverse recovery charge

2)

Q

rr

- 130 - nC

Values

V

GS

=0 V, V

DS

=25 V,

f=1 MHz

V

DD

=20 V, V

GS

=10 V,

I

D

=180 A, R

G

=3.5 Ω

V

DD

=32 V, I

D

=180 A,

V

GS

=0 to 10 V

2)

Defined by design. Not subject to production test.

1)

Current is limited by bondwire; with an R

thJC

= 0.6 K/W the chip is able to carry 380A at 25°C.

V

R

=20 V, I

F

=50A,

di

F

/dt=100 A/µs

T

C

=25 °C

R

ev. 1.0 page 3 2013-05-27

P1-P3 P4-P6 P7-P9

IPB180N04S4LH0ATMA1

Mfr. #:

Buy IPB180N04S4LH0ATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CHANNEL 30/40V

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IPB180N04S4LH0ATMA1