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IPB180N04S4LH0ATMA1

P1-P3P4-P6P7-P9
Data Sheet IPB180N04S4L-H0
1 Power dissipation 2 Drain current
P
tot
= f(T
C
); V
GS
≥ 6 V I
D
= f(T
C
); V
GS
≥ 6 V
3 Safe operating area 4 Max. transient thermal impedance
I
D
= f(V
DS
); T
C
= 25 °C; D = 0 Z
thJC
= f(t
p
)
parameter: t
p
parameter: D =t
p
/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100
I
D
[A]
V
DS
[V]
single pulse
0.01
0.05
0.1
0.5
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
Z
thJC
[K/W]
t
p
[s]
0
50
100
150
200
250
300
0 50 100 150 200
P
tot
[W]
T
C
[°C]
0
40
80
120
160
200
0 50 100 150 200
I
D
[A]
T
C
[°C]
R
ev. 1.0 page 4 2013-05-27
Data Sheet IPB180N04S4L-H0
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I
D
= f(V
DS
); T
j
= 25 °C R
DS(on)
= (I
D
); T
j
= 25 °C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
I
D
= f(V
GS
); V
DS
= 6V R
DS(on)
= f(T
j
); I
D
= 100 A; V
GS
= 10 V
parameter: T
j
0.5
0.75
1
1.25
1.5
-60 -20 20 60 100 140 180
R
DS(on)
[mΩ]
T
j
[°C]
-55 °C
25 °C
175 °C
0
90
180
270
360
450
540
630
720
12345
I
D
[A]
V
GS
[V]
3 V
3.5 V
4 V
4.5 V
10 V
0
90
180
270
360
450
540
630
720
012345
I
D
[A]
V
DS
[V]
3 V
3.5 V
4 V
4.5 V
10 V
0
2
4
6
8
10
0 180 360 540 720
R
DS(on)
[mΩ]
I
D
[A]
R
ev. 1.0 page 5 2013-05-27
Data Sheet IPB180N04S4L-H0
9 Typ. gate threshold voltage 10 Typ. capacitances
V
GS(th)
= f(T
j
); V
GS
= V
DS
C = f(V
DS
); V
GS
= 0 V; f = 1 MHz
parameter: I
D
11 Typical forward diode characteristicis 12 Typ. avalanche characteristics
IF = f(V
SD
) I
AS
= f(t
AV
)
parameter: T
j
parameter: T
j(start)
25 °C
100 °C
150 °C
1
10
100
1000
1 10 100 1000
I
AV
[A]
t
AV
[µs]
25 °C
175 °C
10
0
10
1
10
2
10
3
0 0.2 0.4 0.6 0.8 1 1.2 1.4
I
F
[A]
V
SD
[V]
Ciss
Coss
Crss
10
1
10
2
10
3
10
4
10
5
0 5 10 15 20 25 30
C [pF]
V
DS
[V]
180 µA
1800 µA
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
-60 -20 20 60 100 140 180
V
GS(th)
[V]
T
j
[°C]
R
ev. 1.0 page 6 2013-05-27
P1-P3P4-P6P7-P9

IPB180N04S4LH0ATMA1

Mfr. #:
Buy IPB180N04S4LH0ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL 30/40V
Lifecycle:
New from this manufacturer.
Delivery:
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