IXYX50N170C Datasheet IXYX50N170C | P1-P3

High Voltage

XPT

TM

IGBT

IXYX50N170C

V

CES

= 1700V

I

C110

= 50A

V

CE(sat)







3.7V

t

fi(typ)

= 95ns

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 1700 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1M 1700 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C 178 A

I

C110

T

C

= 110°C 50 A

I

CM

T

C

= 25°C, 1ms 460 A

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 1 I

CM

= 200 A

(RBSOA) Clamped Inductive Load V

CE

 1360 V

P

C

T

C

= 25°C 1500 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

F

C

Mounting Force 20..120 /4.5..27 N/lb

Weight 6 g

DS100800(02/17)

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250A, V

GE

= 0V 1700 V

V

GE(th)

I

C

= 250A, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 25 A

T

J

= 150C 3.5 mA

I

GES

V

CE

= 0V, V

GE

= 20V 100 nA

V

CE(sat)

I

C

= 50A, V

GE

= 15V, Note 1 2.8 3.7 V

T

J

= 150C 3.9 V

Advance Technical Information

Features



High Voltage Package



High Blocking Voltage



High Peak Current Capability



Low Saturation Voltage

Advantages



Low Gate Drive Requirement



High Power Density

Applications



Switch-Mode and Resonant-Mode

Power Supplies



Uninterruptible Power Supplies (UPS)



Laser Generators



Capacitor Discharge Circuits



AC Switches

G = Gate E = Emitter

C = Collector Tab = Collector

PLUS247 (IXYX)

G

Tab

E

C

G

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYX50N170C

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 50A, V

CE

= 10V, Note 1 30 50 S

R

Gi

Gate Input Resistance 2.0 

C

ie

s

5500 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 276 pF

C

res

105 pF

Q

g(on)

260 nC

Q

ge

I

C

= 50A, V

GE

= 15V, V

CE

= 0.5 • V

CES

28 nC

Q

gc

110 nC

t

d(on)

20 ns

t

ri

44 ns

E

on

8.7 mJ

t

d(off)

180 ns

t

fi

95 ns

E

of

f

5.6 mJ

t

d(on)

22 ns

t

ri

40 ns

E

on

11.9 mJ

t

d(off)

236 ns

t

fi

160 ns

E

off

8.2 mJ

R

thJC

0.10 °C/W

R

thCS

0.15 °C/W

Inductive load, T

J

= 25°C

I

C

= 50A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 1

Note 2

Inductive load, T

J

= 150°C

I

C

= 50A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 1

Note 2

Terminals: 1 - Gate

2,4 - Collector

3 - Emitter

PLUS247

TM

Outline

IXYX50N170C

Fig. 1. Output Characteristics @ T

J

= 25

o

C

0

10

20

30

40

50

60

70

80

90

100

00.511.522.533.5 44.55

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

12V

10V

9V

8V

6V

7V

Fig. 2. Extended Output Characteristics @ T

J

= 25

o

C

0

100

200

300

400

500

600

0246810121416182022

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

11V

7V

6V

9V

14V

10V

12V

13V

8V

Fig. 3. Output Characteristics @ T

J

= 150

o

C

0

10

20

30

40

50

60

70

80

90

100

01234567

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

12V

10V

9V

8V

5V

7V

6V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 50A

I

C

= 25A

I

C

= 100A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

2

3

4

5

6

7

5 6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 100A

50A

25A

T

J

= 150

o

C

Fig. 6. Input Admittance

0

25

50

75

100

125

150

175

200

225

250

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0

V

GE

- Volts

I

C

-

Amperes

T

J

= 150

o

C

25

o

C

- 40

o

C

IXYX50N170C

IXYX50N170C

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