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IXYX50N170C

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYX50N170C
Fig. 11. Maximum Transient Thermal Impedance
0.0001
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
90
0 40 80 120 160 200 240 280
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40
o
C
150
o
C
25
o
C
Fig. 10. Reverse-Bias Safe Operating Area
0
40
80
120
160
200
240
200 400 600 800 1000 1200 1400 1600
V
CE
- Volts
I
C
- Amperes
T
J
= 150
o
C
R
G
= 1
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200 240 280
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 850V
I
C
= 50A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
ies
C
oes
C
res
© 2017 IXYS CORPORATION, All Rights Reserved
IXYX50N170C
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
5
10
15
20
25
30
35
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R
G
- Ohms
E
off
- MilliJoules
5
10
15
20
25
30
35
40
E
on
- MilliJoules
E
off
E
on
T
J
= 150
o
C , V
GE
= 15V
V
CE
= 850V
I
C
= 100A
I
C
= 50A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
120
140
160
180
200
220
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R
G
- Ohms
t
f i
- Nanoseconds
100
200
300
400
500
600
t
d(off)
- Nanoseconds
t
f i
t
d(off)
T
J
= 150
o
C, V
GE
= 15V
V
CE
= 850V
I
C
= 100A
I
C
= 50A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0
4
8
12
16
20
24
20 30 40 50 60 70 80 90 100
I
C
- Amperes
E
off
- MilliJoules
0
5
10
15
20
25
30
E
on
- MilliJoules
E
off
E
on
R
G
= 1
Ω
V
GE
= 15V
V
CE
= 850V
T
J
= 25
o
C
T
J
= 150
o
C
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0
3
6
9
12
15
18
21
24
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
4
8
12
16
20
24
28
32
36
E
on
- MilliJoules
E
off
E
on
R
G
= 1
Ω
V
GE
= 15V
V
CE
= 850V
I
C
= 50A
I
C
= 100A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
0
50
100
150
200
250
300
350
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t
f i
- Nanoseconds
50
100
150
200
250
300
350
400
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 850V
T
J
= 25
o
C
T
J
= 150
o
C
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
60
80
100
120
140
160
180
200
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
140
160
180
200
220
240
260
280
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 850V
I
C
= 100A
I
C
= 50A
I
C
= 100A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYX50N170C
IXYS REF: IXY_50N170C (9T-AT653) 2-10-17
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
0
20
40
60
80
100
120
140
160
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t
r i
- Nanoseconds
14
16
18
20
22
24
26
28
30
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 850V
T
J
= 150
o
C
T
J
= 25
o
C
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
140
160
180
200
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
14
16
18
20
22
24
26
28
30
32
34
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 850V
I
C
= 50A
I
C
= 100A
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
0
40
80
120
160
200
240
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R
G
- Ohms
t
r i
- Nanoseconds
0
10
20
30
40
50
60
t
d(on)
- Nanoseconds
t
r i
t
d(on)
T
J
= 150
o
C, V
GE
= 15V
V
CE
= 850V
I
C
= 100A
I
C
= 50A
P1-P3P4-P6

IXYX50N170C

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IGBT 1700V 178A PLUS247
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