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SN7002NH6433XTMA1

P1-P3P4-P6P7-P9
2011-07-11
Rev. 2.6 Page 4
SN7002N
1 Power dissipation
P
tot
= f (T
A
)
0 20 40 60 80 100 120
°C
160
T
A
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
W
0.38
SN7002N
P
tot
2 Drain current
I
D
= f (T
A
)
parameter: V
GS
≥ 10 V
0 20 40 60 80 100 120
°C
160
T
A
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
A
0.22
SN7002N
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
A
= 25 °C
10
0
10
1
10
2
V
V
DS
-3
10
-2
10
-1
10
0
10
1
10
A
SN7002N
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
t
p
= 200.0µs
4 Transient thermal impedance
Z
thJA
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
K/W
SN7002N
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2011-07-11
Rev. 2.6 Page 5
SN7002N
5 Typ. output characteristic
I
D
= f (V
DS
)
parameter: T
j
= 25 °C, V
GS
0 0.5 1 1.5 2 2.5 3 3.5 4
V
5
V
DS
0
0.125
0.25
0.375
0.5
0.625
0.75
A
1
I
D
10V
7V
6V
5V
4.5V
4.0V
3.7V
3.5V
3.0V
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: Tj = 25 °C, V
GS
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
A
1
I
D
0
0.75
1.5
2.25
3
3.75
4.5
5.25
6
Ω
7.5
R
DS(on)
3.1V
3.5V
3.7V
4.1V
4.5V
5V
6V
7V
10V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
≥ 2 x I
D
x R
DS(on)max
parameter: Tj = 25 °C
0 0.8 1.6 2.4 3.2 4 4.8
V
6
V
GS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
A
1
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter: Tj = 25 °C
0 0.2 0.4 0.6 0.8
A
1.1
I
D
0
0.05
0.1
0.15
0.2
0.25
0.3
S
0.4
gfs
2011-07-11
Rev. 2.6 Page 6
SN7002N
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 0.5 A, V
GS
= 10 V
-60 -20 20 60 100
°C
180
T
j
0
1
2
3
4
5
6
7
8
9
10
11
12
Ω
15
SN7002N
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (T
j
)
parameter: V
GS
= V
DS
; I
D
=26µA
-60 -20 20 60 100
°C
160
T
j
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
V
2.2
V
GS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0, f=1 MHz, Tj = 25 °C
0 5 10 15 20
V
30
V
DS
0
10
1
10
2
10
pF
C
Ciss
Coss
Crss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: T
j
0 0.4 0.8 1.2 1.6 2 2.4
V
3
V
SD
-3
10
-2
10
-1
10
0
10
A
SN7002N
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
P1-P3P4-P6P7-P9

SN7002NH6433XTMA1

Mfr. #:
Buy SN7002NH6433XTMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET SMALL SIGNAL+P-CH
Lifecycle:
New from this manufacturer.
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