SN7002NH6433XTMA1

2011-07-11
Rev. 2.6 Page 7
SN7002N
13 Typ. gate charge
V
GS
= f (Q
G
); parameter: V
DS
,
I
D
= 0.2 A pulsed, T
j
= 25 °C
0 0.4 0.8 1.2 1.6 2
nC
2.8
Q
G
0
2
4
6
8
10
12
V
16
SN7002N
V
GS
0.2
V
DS max
0.5
V
DS max
0.8 V
DS max
14 Drain-source breakdown voltage
V
(BR)DSS
= f (T
j
)
-60 -20 20 60 100
°C
180
T
j
54
56
58
60
62
64
66
68
V
72
SN7002N
V
(BR)DSS
SOT23
Package Outline:
Footprint: Packaging:
Dimensions in mm
Rev 2.6 page 8 2011-07-11
SN7002N
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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Rev 2.6 page 9 2011-07-11
SN7002N

SN7002NH6433XTMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET SMALL SIGNAL+P-CH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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