MMIX4B20N300 Datasheet MMIX4B20N300 | P1-P3

Symbol Test Conditions Maximum Ratings

V

CES

T

C

= 25°C to 150°C 3000 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1MΩ 3000 V

V

GES

Continuous ± 20 V

V

GEM

Transient ± 30 V

I

C25

T

C

= 25°C 34 A

I

C110

T

C

= 110°C 14 A

I

CM

T

C

= 25°C, V

GE

= 19V, 1ms 150 A

10ms 74 A

SSOA V

GE

= 15V, T

VJ

= 125°C, R

G

= 20Ω I

CM

= 130 A

(RBSOA) Clamped Inductive Load 1500 V

P

C

T

C

= 25°C 150 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10 seconds 260 °C

F

C

Mounting Force 50..200 / 11..45 Nm/lb.in.

V

ISOL

50/60Hz, 1 Minute 4000 V~

Weight 8 g

DS100432A(06/12)

MMIX4B20N300

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 3000 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

2.5 5.0 V

I

CES

V

CE

= 0.8 • V

CES

, V

GE

= 0V 35 μA

Note 2, T

J

= 125°C 1.5 mA

I

GES

V

CE

= 0V, V

GE

= ± 20V ±100 nA

V

CE(sat)

I

C

= 20A, V

GE

= 15V, Note 1 2.7 3.2 V

T

J

= 125°C 3.2 V

V

CES

= 3000V

I

C110

= 14A

V

CE(sat)

≤ ≤

≤ 3.2V

High Voltage, High Gain

BIMOSFET

TM

Monolithic

Bipolar MOS Transistor

(Electrically Isolated Tab)

E1C3

C2

E3E4

G2

E2C4

G4

C1

G1

G3

G = Gate E = Emitter

C = Collector

G1

G2

E1C3

C1

C2

G3

G4

E2C4

E3E4

Isolated Tab

G3

C1

E1C3

G1

E3E4

G4

E2C4

G2

C2

Features

z

Silicon Chip on Direct-Copper Bond

(DCB) Substrate

z

Isolated Mounting Surface

z

4000V~ Electrical Isolation

z

High Blocking Voltage

z

High Peak Current Capability

z

Low Saturation Voltage

Advantages

z

Low Gate Drive Requirement

z

High Power Density

Applications

z

Switch-Mode and Resonant-Mode

Power Supplies

z

Capacitor Discharge Circuits

Preliminary Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

MMIX4B20N300

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fS

I

C

= 20A, V

CE

= 10V, Note 1 11 18 S

C

ies

2230 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 92 pF

C

res

33 pF

Q

g

105 nC

Q

ge

I

C

= 20A, V

GE

= 15V, V

CE

= 1000V 13 nC

Q

gc

45 nC

t

d(on)

64 ns

t

r

210 ns

t

d(off)

300 ns

t

f

504 ns

t

d(on)

68 ns

t

r

540 ns

t

d(off)

300 ns

t

f

395 ns

R

thJC

0.83 °C/W

R

thCS

0.05 °C/W

R

thJA

30 °C/W

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Resistive Switching Times, T

J

= 125°C

I

C

= 20A, V

GE

= 15V

V

CE

= 1250V, R

G

= 10Ω

Resistive Switching Times, T

J

= 25°C

I

C

= 20A, V

GE

= 15V

V

CE

= 1250V, R

G

= 10Ω

Reverse Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

V

F

I

F

= 20A, V

GE

= 0V 2.1 V

t

rr

1.35 μs

I

RM

30 A

I

F

= 10A, V

GE

= 0V, -di

F

/dt = 100A/μs

V

R

= 100V, V

GE

= 0V

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Device must be heatsunk for high temperature leakage current

measurements to avoid thermal runaway.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

MMIX4B20N300

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

5

10

15

20

25

30

35

40

00.511.5 22.5 33.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 25V

20V

15V

10V

5V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

0 2 4 6 8 101214161820

V

CE

- Volts

I

C

-

Amperes

V

GE

= 25V

20V

10V

15V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

5

10

15

20

25

30

35

40

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 25V

20V

15V

10V

5V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 40A

I

C

= 20A

I

C

= 10A

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

5 7 9 1113151719212325

V

GE

- Volts

V

CE

- Volts

I

C

= 40A

T

J

= 25ºC

10A

20A

Fig. 6. Input Admittance

0

5

10

15

20

25

30

35

40

45

50

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5

V

GE

- Volts

I

C

-

Amperes

T

J

= 125ºC

25ºC

- 40ºC

MMIX4B20N300

MMIX4B20N300

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