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MMIX4B20N300
P1-P3
P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
MMIX4B20N300
Fi
g.
7. T
ran
sco
nd
uctan
ce
0
4
8
12
16
20
24
28
0
5
10
15
20
25
30
35
40
45
50
55
I
C
- Am
p
eres
g
f s
-
Si
emens
T
J
= - 40º
C
25ºC
125ºC
Fig. 9. Ga
te
Charge
0
2
4
6
8
10
12
14
16
0
1
0
2
03
04
0
5
06
0
7
08
09
0
1
0
0
1
1
0
Q
G
- Nan
oCoul
om
b
s
V
GE
- Volt
s
V
CE
= 1kV
I
C
= 20A
I
G
= 10mA
Fig. 10. Ca
pac
ita
nce
10
100
1,000
10,000
0
5
10
15
20
25
30
35
40
V
CE
- Vol
ts
Capacitance - Pi
coFarads
f
= 1 MH
z
C
ies
C
oes
C
res
Fig. 8. Forward V
olta
ge Drop of Int
rinsic
Diode
0
10
20
30
40
50
60
00
.
511
.
52
2
.
53
V
F
- Vol
ts
I
F
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fi
g.
11. Rever
se-Bias Safe Op
eratin
g Area
0
20
40
60
80
100
120
140
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
V
CE
- Vol
ts
I
C
- Am
peres
T
J
= 125ºC
R
G
= 20
Ω
dv / dt <
10V /
n
s
Fi
g. 12. Maxim
u
m
T
r
ansien
t T
her
m
al
Im
pedan
ce
0.01
0.1
1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Puls
e
W
idt
h -
Se
c
o
nds
Z
(th)JC
- ºC /
W
D
= t
p / T
tp
T
D = 0.
50
D = 0.
20
D = 0.
10
D = 0.
05
D = 0.
02
D = 0.
01
Single Pulse
© 2012 IXYS CORPORATION, All Rights Reserved
IXYS REF: MMIX4B20N300(5P)6-05-12-B
MMIX4B20N300
Fi
g.
14.
Resi
sti
ve T
u
rn
-o
n R
ise
T
i
m
e vs.
Collec
t
or Current
0
100
200
300
400
500
600
700
10
15
20
25
30
35
40
I
C
- A
m
per
es
t
r
- Nan
ose
cond
s
R
G
= 10
Ω
, V
GE
= 15
V
V
CE
= 1250V
T
J
= 125ºC
T
J
= 25ºC
Fi
g
. 15.
Resi
sti
ve T
u
rn
-o
n Swi
tch
in
g T
im
es vs
.
Gate Resistance
450
500
550
600
650
700
750
800
850
10
20
30
40
50
60
70
80
R
G
- Oh
m
s
t
r
- Nanoseconds
40
60
80
100
120
140
160
180
200
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 12
5ºC, V
GE
= 15V
V
CE
= 1
25
0V
I
C
= 2
0A
, 40
A
Fig. 16
. Re
sis
tive
Tu
rn-
off
S
wit
ching
T
im
es
vs
.
Junc
tion Tem
pera
tu
re
100
200
300
400
500
600
700
25
35
45
55
65
75
85
95
105
115
125
T
J
-
D
egr
e
e
s
C
e
nti
gr
ade
t
f
- Nanoseconds
230
250
270
290
310
330
350
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 1
25
0V
I
C
= 40A
I
C
= 20A
Fi
g. 17.
Resisti
ve T
ur
n-off Swi
tching
T
i
m
es vs.
Collec
t
or Current
0
200
400
600
800
1000
1200
10
15
20
25
30
35
40
I
C
- A
m
per
es
t
f
- Nanoseconds
220
260
300
340
380
420
460
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10
Ω
, V
GE
= 15
V
V
CE
= 1250V
T
J
= 125ºC, 25ºC
Fi
g.
13.
Resi
sti
ve T
u
rn
-o
n R
ise
T
i
m
e vs.
Jun
cti
on
T
em
per
atu
re
0
100
200
300
400
500
600
700
25
35
45
55
65
75
85
95
105
115
125
T
J
- Deg
rees Cen
t
ig
rad
e
t
r
- Nan
ose
cond
s
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 1250V
I
C
= 20A
I
C
= 40A
Fi
g.
18.
Resi
sti
ve T
u
rn
-o
ff Swi
tchi
n
g T
im
es vs.
Gate Resistance
200
250
300
350
400
450
500
550
600
10
20
30
40
50
60
70
80
R
G
- Oh
m
s
t
f
- Nanoseconds
0
200
400
600
800
1000
1200
1400
1600
t
d
(
off
)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 1
25
º
C
, V
GE
= 15
V
V
CE
= 1
25
0V
I
C
= 20A
I
C
= 40A
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
MMIX4B20N300
Package Outline
P1-P3
P4-P6
MMIX4B20N300
Mfr. #:
Buy MMIX4B20N300
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT SMPD PKG-BIMOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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