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MMRF1022HSR5

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
MMRF1022HS
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 63 W asy mmetrical Doherty RF power LDMOS trans istor is optimized
for instantaneous signal bandwidth capabilities c overing the frequenc y range
of 2110 to 2170 MHz . This part is ideally suited for commerc ial and defens e
communications and electronic warfare applications, such as an IED jammer.
2100 MHz
• Typical Doherty Single--Carrier W--CDMA Performance: V
DD
=28Vdc,
I
DQA
= 500 mA, V
GSB
=0.5Vdc,P
out
= 63 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
G
ps
(dB)
η
D
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz 16.2 51.6 7.9 –28.5
2140 MHz 16.2 51.8 7.9 –28.8
2170 MHz 16.1 50.9 7.9 –29.5
Features
• Advanced high performance in--package Doherty
• Greater negative gate--source voltage range for improved Class C operation
• Designed for digital predistortion error correction systems
Document Number: MMRF1022HS
Rev. 0, 4/2016
Freescale Semiconductor
Technical Data
2110–2170 MHz, 63 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
MMRF1022HS
NI--1230S--4L2L
(Top View)
RF
outA
/V
DSA
RF
outB
/V
DSB
RF
inA
/V
GSA
RF
inB
/V
GSB
VBW
A
(1)
6
3
15
24
Carrier
Peaking
Figure 1. Pin Connections
VBW
B
(1)
1. Device cannot operate with the V
DD
current
supplied through pin 3 and pin 6.
© Freescale Semiconductor, Inc., 2016. All rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MMRF1022HS
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
–0.5, +65 Vdc
Gate--Source Voltage V
GS
–6.0, +10 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
–65 to +150 °C
Case Operating Temperature Range T
C
–40 to +150 °C
Operating Junction Temperature Range
(1)
T
J
–40 to +225 °C
CW Operation @ T
C
=25°C
Derate above 25°C
CW 278
1.2
W
W/°C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 73°C, 63 W Avg., W--CDMA, 28 Vdc, I
DQA
= 500 mA, V
GSB
=0.5Vdc,
2140 MHz
R
θ
JC
0.33 °C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2500 V
Machine Model (per EIA/JESD22--A115) B, passes 200 V
Charge Device Model (per JESD22--C101) IV, passes 1200 V
Table 4. Electrical Characteristics (T
A
=25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
(3)
Zero Gate Voltage Drain Leakage Current
(V
DS
=65Vdc,V
GS
=0Vdc)
I
DSS
— — 10 μAdc
Zero Gate Voltage Drain Leakage Current
(V
DS
=32Vdc,V
GS
=0Vdc)
I
DSS
— — 1 μAdc
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 1 μAdc
On Characteristics -- Side A
(3)
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 140 μAdc)
V
GS(th)
0.8 1.2 1.6 Vdc
Gate Quiescent Voltage
(V
DD
=28Vdc,I
DA
= 500 mAdc, Measured in Functional Test)
V
GSA(Q)
1.4 1.9 2.2 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=1.4Adc)
V
DS(on)
0.1 0.2 0.3 Vdc
On Characteristics -- Side B
(3)
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 240 μAdc)
V
GS(th)
0.8 1.2 1.6 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=2.4Adc)
V
DS(on)
0.1 0.2 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF
and search for AN1955.
3. Each side of device measured separately.
(continued)
MMRF1022HS
3
RF Device Data
Freescale Semiconductor, Inc.
Electrical Characteristics
(T
A
=25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests
(1,2)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQA
= 500 mA, V
GSB
=0.5Vdc,
P
out
= 63 W Avg., f = 2140 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ ±5MHzOffset.
Power Gain
G
ps
15.6 16.2 18.6 dB
Drain Efficiency η
D
49.2 51.8 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 7.2 7.9 — dB
Adjacent Channel Power Ratio ACPR — –28.8 –27.2 dBc
Load Mismatch (In Freescale Test Fixture, 50 ohm system) I
DQA
= 500 mA, f = 2140 MHz
VSWR 10:1 at 28 Vdc, 288 W Pulse Output Power
(3 dB Input Overdrive from 363 W Pulse Rated Power)
No Device Degradation
Typical Performance
(2)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQA
= 500 mA, V
GSB
=0.5Vdc,
2110–2170 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW P1dB — 301
(3)
— W
P
out
@ 3 dB Compression Point
(4)
P3dB — 400 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110–2170 MHz bandwidth)
Φ — –27 — °
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
res
— 100 — MHz
Gain Flatness in 60 MHz Bandwidth @ P
out
=63WAvg. G
F
— 0.2 — dB
Gain Variation over Temperature
(–30°Cto+85°C)
∆G — 0.012 — dB/°C
Output Power Variation over Temperature
(–30°Cto+85°C)
(3)
∆P1dB — 0.002 — dB/°C
Table 5. Ordering Information
Device Tape and Reel Information Package
MMRF1022HSR5 R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel NI--1230S--4L2L
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. Exceeds recommended operating conditions. S ee CW operation data in Maximum Ratings table.
4. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
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MMRF1022HSR5

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Buy MMRF1022HSR5
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 63 W Avg., 28 V
Lifecycle:
New from this manufacturer.
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