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MMRF1022HSR5

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
4
RF Device Data
Freescale Semiconductor, Inc.
MMRF1022HS
Figure 2. MMRF1022HS Test Circuit Component Layout
V
GGB
V
GGA
V
DDA
V
DDB
R2
C1
C2
R4
C10
C14
C
P
C3
C4
Z1
R1
C7
C6
C5
R5
C8
C9
R3
C11
C17
C18
C20
C16
C15
C13
C12
C19
CUT OUT AREA
Table 6. MMRF1022HS Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C9, C10, C11, C12, C18 10 μF Chip Capacitors C5750X7S2A106M230KB TDK
C2, C8, C13, C17 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC
C3, C5, C15 9.1 pF Chip Capacitors ATC600F9R1BT250XT ATC
C4 0.5 pF Chip Capacitor ATC600F0R5BT250XT ATC
C6 0.8 pF Chip Capacitor ATC600F0R8BT250XT ATC
C7 1.1 pF Chip Capacitor ATC600F1R1BT250XT ATC
C14 4.7 pF Chip Capacitor ATC600F4R7BT250XT ATC
C16 0.2 pF Chip Capacitor ATC600F0R2BT250XT ATC
C19, C20 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp
R1 50 Ω, 20 W Chip Resistor C20A5024 Anaren
R2, R3 5.6 KΩ, 1/4 W Chip Resistors CRCW12065K60FKEA Vishay
R4, R5 6.2 Ω, 1/4 W Chip Resistors CRCW12066R20FKEA Vishay
Z1 2000–2300 MHz Band, 90°, 5 dB Directional Coupler X3C21P1-05S Anaren
PCB Rogers RO4350B, 0.020″, ε
r
=3.66 — MTL
MMRF1022HS
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 2110–2170 MHz
PARC (dB)
–2.1
–1.7
–1.8
–1.9
–2
–2.2
2060
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ P
out
= 63 Watts Avg.
15
17
16.8
16.6
–34
53
52
51
50
–29
–30
–31
–32
η
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
16.4
16.2
16
15.8
15.6
15.4
15.2
2080 2100 2120 2140 2160 2180 2200 2220
49
–33
ACPR (dBc)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
–75
0
–15
–30
–60
1 300
IMD, INTERMODULA TION DISTORTION (dBc)
–45
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
P
out
, OUTPUT POWER (WATTS)
–1
–3
40
0
–2
–4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
20 60 80 140
30
60
55
50
45
40
35
η
D
, DRAIN EFFICIENCY (%)
100
η
D
ACPR
PARC
ACPR (dBc)
–36
–24
–26
–28
–32
–30
–34
18
G
ps
, POWER GAIN (dB)
17.5
17
16.5
16
15.5
15
G
ps
–5
1
ACPR
η
D
PARC
G
ps
V
DD
=28Vdc,P
out
= 12 W (PEP), I
DQA
= 500 mA
V
GSB
= 0.5 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3--U
IM5--U
IM5--L
IM7--L
IM7--U
IM3--L
100
–1 dB = 30 W
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
–2 dB = 63 W
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
V
DD
=28Vdc,P
out
=63W(Avg.)
I
DQA
= 500 mA, V
GSB
=0.5Vdc
–3 dB = 87.5 W
V
DD
=28Vdc,I
DQA
= 500 mA, V
GSB
=0.5Vdc
f = 2140 MHz, Single--Carrier W--CDMA
6
RF Device Data
Freescale Semiconductor, Inc.
MMRF1022HS
TYPICAL CHARACTERISTICS — 2110–2170 MHz
1
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
–10
–20
8
20
0
60
50
40
30
20
η
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
18
16
10 100 400
10
–60
ACPR (dBc)
14
12
10
0
–30
–40
–50
Figure 7. Broadband Frequency Response
6
18
f, FREQUENCY (MHz)
V
DD
=28Vdc
P
in
=0dBm
I
DQA
= 500 mA
V
GSB
=0.5Vdc
14
12
10
GAIN (dB)
16
8
1800 1880 1960 2040 2120 2200 2280 2360 2440
Gain
ACPR
η
D
2110 MHz
G
ps
2170 MHz
2170 MHz
2110 MHz
2140 MHz
2170 MHz
2170 MHz
2140 MHz
2140 MHz
2110 MHz
V
DD
=28Vdc,I
DQA
= 500 mA, V
GSB
=0.5Vdc
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

MMRF1022HSR5

Mfr. #:
Buy MMRF1022HSR5
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 63 W Avg., 28 V
Lifecycle:
New from this manufacturer.
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