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IXGH16N170A

P1-P3P4-P6P7-P7
© 2014 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25C to 150C 1700 V
V
CGR
T
J
= 25C to 150C, R
GE
= 1M 1700 V
V
GES
Continuous 20 V
V
GEM
Transient 30 V
I
C25
T
C
= 25C16A
I
C90
T
C
= 90C11A
I
F90
T
C
= 90C17A
I
CM
T
C
= 25C, 1ms 40 A
SSOA V
GE
= 15V, T
VJ
= 125C, R
G
= 10 I
CM
= 40 A
(RBSOA) Clamped Inductive Load 0.8 • V
CES
t
sc
V
GE
= 15V, V
CE
= 1200V, T
J
= 125°C 10 μs
(SCSOA) R
G
= 22, Non Repetitive
P
C
T
C
= 25C 190 W
T
J
-55 ... +150 C
T
JM
150 C
T
stg
-55 ... +150 C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque (TO-247) 1.13/10 Nm/lb.in
Weight TO-268 4 g
TO-247 6 g
DS99235C(04/14)
V
CES
= 1700V
I
C90
= 11A
V
CE(sat)
£ 5.0V
t
fi(typ)
= 35ns
IXGT16N170A
IXGH16N170A
IXGT16N170AH1
IXGH16N170AH1
High Voltage
IGBT w/ Sonic Diode
Features
High Blocking Voltage
International Standard Packages
Low Conduction Losses
Anti-Parallel Sonic Diode
High Blocking Voltage
High Currect Handling Capability
Advantages
Low Gate Drive Requirement
High Power Density
Applications
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
AC Choppers
Capacitor Discharge Circuits
AC Motor Drives
DC Servo & Robot Drives
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250A, V
GE
= 0V 1700 V
V
GE(th)
I
C
= 250A, V
CE
= V
GE
3.0 5.0 V
I
CES
V
CE
= 0.8 • V
CES
,
V
GE
= 0V 50 A
100 A
750 A
1.5 mA
I
GES
V
CE
= 0V, V
GE
= 20V 100 nA
V
CE(sat)
I
C
= 11A, V
GE
= 15V, Note 1 4.0 5.0 V
T
J
= 125C 4.5 V
G = Gate C = Collector
E = Emiiter Tab = Collector
TO-247 (IXGH)
G
E
C (Tab)
C
TO-268 (IXGT)
E
G
C (Tab)
H1
16N170A
16N170AH1
16N170A
16N170AH1
T
J
= 125C
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGH/T16N170A
IXGH/T16N170AH1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
TO-247 Outline
Terminals: 1 - Gate 2 - Collector
3 - Emitter
TO-268 Outline
Terminals: 1 - Gate 2,4 - Collector
3 - Emitter
e
P
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 16A, V
CE
= 10V, Note 1 6.0 12.5 S
C
ies
1500 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 99 pF
110 pF
C
res
33 pF
Q
g(on)
70 nC
Q
ge
I
C
= 11A, V
GE
= 15V, V
CE
= 0.5 • V
CES
9 nC
Q
gc
32 nC
t
d(on)
12 ns
t
ri
22 ns
E
on
2.35 mJ
t
d(off)
200 300 ns
t
fi
35 150 ns
E
off
0.38 1.50 mJ
t
d(on)
13 ns
t
ri
22 ns
E
on
2.80 mJ
t
d(off)
210 ns
t
fi
88 ns
E
off
0.67 mJ
R
thJC
0.65 C/W
R
thCS
0.21 C/W
Inductive load, T
J
= 125°C
I
C
= 16A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 10
Note 2
Inductive load, T
J
= 25°C
I
C
= 16A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 10
Note 2
16N170A
16N170AH1
Reverse Sonic Diode (FRD)
(T
J
= 25°C, Unless Otherwise Specified) Characteristic Values
Symbol Test Conditions Min. Typ. Max.
V
F
I
F
= 20A, V
GE
= 0V, Note 1 3.4 V
T
J
= 125C 2.8
t
rr
300 ns
550 ns
I
RM
13 A
15 A
R
thJC
1.5 °C/W
I
F
= 10A, V
GE
= 0V,
-di
F
/dt = 250A/μs, V
R
= 900V
T
J
= 125C
T
J
= 125C
© 2014 IXYS CORPORATION, All Rights Reserved
IXGH/T16N170A
IXGH/T16N170AH1
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
4
8
12
16
20
24
28
32
012345678
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
10V
9V
6V
5V
8V
7V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
0 5 10 15 20 25 30
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
10V
11V
13V
12V
8V
9V
14V
7V
6V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
4
8
12
16
20
24
28
32
012345678910
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
10V
9V
5V
6V
8V
7V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 16A
I
C
= 8A
I
C
= 32A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
3
4
5
6
7
8
9
10
6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 32A
T
J
= 25ºC
16A
8A
Fig. 6. Input Admittance
0
5
10
15
20
25
30
35
40
45
50
345678910
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
P1-P3P4-P6P7-P7

IXGH16N170A

Mfr. #:
Buy IXGH16N170A
Manufacturer:
Littelfuse
Description:
IGBT Transistors 32 Amps 1700 V 5 V Rds
Lifecycle:
New from this manufacturer.
Delivery:
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