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IXGH16N170A

P1-P3P4-P6P7-P7
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGH/T16N170A
IXGH/T16N170AH1
Fig. 7. Transconductance
0
2
4
6
8
10
12
14
16
18
20
22
0 5 10 15 20 25 30 35 40 45 50 55
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
5
10
15
20
25
30
35
40
45
100 300 500 700 900 1100 1300 1500 1700
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 10
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 10203040506070
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 850V
I
C
= 11A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
C
ies
C
oes
C
res
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2014 IXYS CORPORATION, All Rights Reserved
IXGH/T16N170A
IXGH/T16N170AH1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
10 20 30 40 50 60 70 80
R
G
- Ohms
E
off
- MilliJoules
0
2
4
6
8
10
12
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 850V
I
C
= 16A
I
C
= 32A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
30
40
50
60
70
80
90
100
110
120
10 20 30 40 50 60 70 80
R
G
- Ohms
t
f i
- Nanoseconds
0
100
200
300
400
500
600
700
800
900
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125 V
GE
= 15V
V
CE
= 850V
I
C
= 32A
I
C
= 16A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
8 121620242832
I
C
- Amperes
E
off
- MilliJoules
0
1
2
3
4
5
6
7
8
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
Ω
,
V
GE
= 15V
V
CE
= 850V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0
0.2
0.4
0.6
0.8
1
1.2
1.4
25 50 75 100 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
1
2
3
4
5
6
7
8
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
Ω
,
V
GE
= 15V
V
CE
= 850V
I
C
= 16A
I
C
= 32A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
0
20
40
60
80
100
120
140
8 121620242832
I
C
- Amperes
t
f i
- Nanoseconds
140
160
180
200
220
240
260
280
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 850V
T
J
= 25ºC
T
J
= 125ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
10
20
30
40
50
60
70
80
90
100
25 50 75 100 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
100
120
140
160
180
200
220
240
260
280
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 850V
I
C
= 16A
I
C
= 32A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGH/T16N170A
IXGH/T16N170AH1
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
5
10
15
20
25
30
35
40
45
50
8 121620242832
I
C
- Amperes
t
r i
- Nanoseconds
6
8
10
12
14
16
18
20
22
24
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 850V
T
J
= 25ºC
T
J
= 125ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
10
20
30
40
50
60
70
80
25 50 75 100 125
T
J
- Degrees Centigrade
t
r i
- Nanosecond
s
8
10
12
14
16
18
20
22
24
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 850V
I
C
= 32A
I
C
= 16A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
10
20
30
40
50
60
70
80
90
100
10 20 30 40 50 60 70 80
R
G
- Ohms
t
r i
- Nanosecond
s
0
10
20
30
40
50
60
70
80
90
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 16A
I
C
= 32A
P1-P3P4-P6P7-P7

IXGH16N170A

Mfr. #:
Buy IXGH16N170A
Manufacturer:
Littelfuse
Description:
IGBT Transistors 32 Amps 1700 V 5 V Rds
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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