FDWS9510L−F085
www.onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 11. R
DS(on)
vs. Gate Voltage Figure 12. Normalized R
DS(on)
vs. Junction
Temperature
V
GS
, GATE−TO−SOURCE VOLTAGE (V) T
J
, JUNCTION TEMPERATURE (°C)
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
Figure 14. Normalized Drain−to−Source
Breakdown Voltage vs. Junction Temperature
T
J
, JUNCTION TEMPERATURE (°C) T
J
, JUNCTION TEMPERATURE (°C)
Figure 15. Capacitance vs. Drain−to−Source
Voltage
Figure 16. Gate Charge vs. Gate−to−Source
Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Q
g
, GATE CHARGE (nC)
R
DS(on)
, ON−RESISTANCE (mW)
NORMALIZED DRAIN−SOURCE
ON−RESISTANCE
NORMALIZED GATE THRESHOLD VOLTAGECAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
C
ISS
C
OSS
C
RSS
I
D
= −50 A
V
GS
= −10 V
V
GS
= V
DS
I
D
= −250 mA
I
D
= −50 A
f = 1 MHz
V
GS
= 0 V
0
60
120
35 8
0.6
0.8
1.8
−80 40 120
0.4
0.6
−80 −40
1.05
−80 40 120 160 200
10K
1 10 1000.1
1K
100
10
0
4
10
01830
4 −40
1.0
1.2
I
D
= 5 mA
080
1.2
0.90
40
6
6
80
200160
0.95
1.10
109
1.4
1.6
100
1.0
40 80 120 0−40
1.00
T
J
= 25°C
T
J
= 175°C
80
20
7
I
D
= −50 A
0 160 200
0.8
12 24
2
6
8
V
DD
= −24 V
V
DD
= −16 V
V
DD
= −20 V
NORMALIZED DRAIN−TO−SOURCE
BREAKDOWN VOLTAGE
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
