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IXYH16N170CV1

P1-P3P4-P6P7-P7
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH16N170CV1
Fig. 7. Transconductance
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30 35 40 45 50
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
70
200 400 600 800 1000 1200 1400 1600 1800
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 10
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45 50 55 60
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 850V
I
C
= 16A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
ies
C
oes
C
res
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
© 2017 IXYS CORPORATION, All Rights Reserved.
IXYH16N170CV1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
1
2
3
4
5
6
10 20 30 40 50 60 70 80
R
G
- Ohms
E
off
- MilliJoules
0
2
4
6
8
10
12
E
on
- MilliJoules
E
off
E
on
T
J
= 150ºC , V
GE
= 15V
V
CE
= 850V
I
C
= 16A
I
C
= 32A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
60
80
100
120
140
160
180
200
10 20 30 40 50 60 70 80
R
G
- Ohms
t
f i
- Nanoseconds
0
100
200
300
400
500
600
700
t
d(off)
- Nanoseconds
t
f i
t
d(off)
T
J
= 150ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 32A
I
C
= 16A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0
1
2
3
4
5
6
10 12 14 16 18 20 22 24 26 28 30 32
I
C
- Amperes
E
off
- MilliJoules
1
2
3
4
5
6
7
E
on
- MilliJoules
E
off
E
on
R
G
= 10
Ω
V
GE
= 15V
V
CE
= 850V
T
J
= 150ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0
1
2
3
4
5
6
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
1
2
3
4
5
6
7
E
on
- MilliJoules
E
off
E
on
R
G
= 10
Ω
V
GE
= 15V
V
CE
= 850V
I
C
= 16A
I
C
= 32A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
20
60
100
140
180
220
10 12 14 16 18 20 22 24 26 28 30 32
I
C
- Amperes
t
f i
- Nanoseconds
50
100
150
200
250
300
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 850V
T
J
= 150ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
20
60
100
140
180
220
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
100
120
140
160
180
200
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 850V
I
C
= 32A
I
C
= 16A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH16N170CV1
IXYS REF: IXY_16N170C(4P-AT653) 1-26-17
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
0
10
20
30
40
50
60
10 12 14 16 18 20 22 24 26 28 30 32
I
C
- Amperes
t
r i
- Nanoseconds
0
5
10
15
20
25
30
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 850V
T
J
= 25ºC
T
J
= 150ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
10
20
30
40
50
60
70
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
8
10
12
14
16
18
20
22
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 850V
I
C
= 32A
I
C
= 16A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
20
40
60
80
100
10 20 30 40 50 60 70 80
R
G
- Ohms
t
r i
- Nanoseconds
10
20
30
40
50
60
t
d(on)
- Nanoseconds
t
r i
t
d(on)
T
J
= 150ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 16A
I
C
= 32A
P1-P3P4-P6P7-P7

IXYH16N170CV1

Mfr. #:
Buy IXYH16N170CV1
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
Lifecycle:
New from this manufacturer.
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