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IXYH16N170CV1

P1-P3P4-P6P7-P7
© 2017 IXYS CORPORATION, All Rights Reserved.
IXYH16N170CV1
Fig. 21. Diode Forward Characteristics
0
10
20
30
40
50
60
70
01234567
V
F
(V)
I
F
(A)
T
J
= 150ºC
T
J
= 25ºC
Fig. 22. Reverse Recovery Charge vs. -di
F
/dt
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 200 400 600 800 1000 1200 1400 1600
-di
F
/ dt (A/µs)
Q
RR
(µC)
I
F
= 32A
8A
16A
T
J
= 150ºC
V
R
= 1200V
Fig. 23. Reverse Recovery Current vs. -di
F
/dt
5
10
15
20
25
30
35
40
0 200 400 600 800 1000 1200 1400 1600
di
F
/dt (A/µs)
I
RR
(A)
I
F
= 32A
16A
8A
T
J
= 150ºC
V
R
= 1200V
Fig. 24. Reverse Recovery Time vs. -di
F
/dt
50
100
150
200
250
300
0 200 400 600 800 1000 1200 1400 1600
-di
F
/dt (A/µs)
t
RR
(ns)
8A
16A
I
F
= 32A
T
J
= 150ºC
V
R
= 1200V
Fig. 26. Maximum Transient Thermal Impedance
(Diode)
0.1
1
0.0001 0.001 0.01 0.1 1
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 25. Dynamic Parameters Q
RR,
I
RR
vs.
Junction Temperature
0.6
0.7
0.8
0.9
1.0
1.1
0 20 40 60 80 100 120 140 160
T
J
(ºC)
K
F
K
F
I
RR
K
F
Q
RR
V
R
= 1200V
I
F
= 16A
-diF /dt = 500A/µs
P1-P3P4-P6P7-P7

IXYH16N170CV1

Mfr. #:
Buy IXYH16N170CV1
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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