IXGA24N120C3 Datasheet IXGA24N120C3, IXGH24N120C3, IXGP24N120C3 | P1-P3

G = Gate C = Collector

E = Emitter TAB = Collector

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 1200 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1MΩ 1200 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C48 A

I

C100

T

C

= 100°C24 A

I

CM

T

C

= 25°C, 1ms 96 A

I

A

T

C

= 25°C 20 A

E

AS

T

C

= 25°C 250 mJ

SSOA V

GE

= 15V, T

J

= 125°C, R

G

= 5Ω I

CM

= 48 A

(RBSOA) Clamped inductive load @V

CE

≤ ≤

≤ 1200V

P

C

T

C

= 25°C 250 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

M

d

Mounting torque 1.13/10 Nm/lb.in.

T

L

Maximum lead temperature for soldering 300 °C

T

SOLD

1.6mm (0.062 in.) from case for 10s 260 °C

Weight TO-263 2.5 g

TO-247 6.0 g

TO-220 3.0 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 1200 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

2.5 5.0 V

I

CES

V

CE

= V

CES

100 μA

V

GE

= 0V T

J

= 125°C 1.5 mA

I

GES

V

CE

= 0V, V

GE

= ±20V ±100 nA

V

CE(sat)

I

C

= 20A,

V

GE

= 15V, Note 2 3.6 4.2 V

T

J

= 125°C 3.1 V

Features

z

International standard packages:

JEDEC TO-247AD

z

MOS Gate turn-on

- drive simplicity

z

Avalanche rated

Applications

z

AC motor speed control

z

DC servo and robot drives

z

DC choppers

z

Uninterruptible power supplies (UPS)

z

Switch-mode and resonant-mode

power supplies

DS99851A(01/08)

GenX3

TM

1200V IGBT

Preliminary Technical Information

V

CES

= 1200V

I

C25

= 48A

V

CE(sat)

≤≤

≤ 4.2V

t

fi(typ)

= 110ns

High speed PT IGBTs for

10-50kHz Switching

IXGA24N120C3

IXGH24N120C3

IXGP24N120C3

TO-220 (IXGP)

TO-263 (IXGA)

G

E

TO-247 (IXGH)

G

E

C

G

C

E

C (TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGA24N120C3 IXGH24N120C3

IXGP24N120C3

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified) Min. Typ. Max.

g

fs

I

C

= 24A, V

CE

= 10V, Note 2 10 17 S

C

ies

1900 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 125 pF

C

res

52 pF

Q

g

79 nC

Q

ge

I

C

= 24A, V

GE

= 15V, V

CE

= 0.5 • V

CES

12 nC

Q

gc

36 nC

t

d(on)

16 ns

t

ri

27 ns

E

on

1.16 mJ

t

d(off)

93 ns

t

fi

110 ns

E

off

0.47 0.85 mJ

t

d(on)

16 ns

t

ri

35 ns

E

on

2.18 mJ

t

d(off)

125 ns

t

fi

305 ns

E

off

1.18 2.00 mJ

R

thJC

0.50 °C/W

R

thCK

TO-220 0.50 °C/W

TO-247 0.21 °C/W

Inductive load, T

J

= 125

°°

°C

I

C

= 20A, V

GE

= 15V

V

CE

= 600V, R

G

= 5Ω

Note 1

Inductive load, T

J

= 25

°°

°C

I

C

= 20A, V

GE

= 15V

V

CE

= 600V, R

G

= 5Ω

Note 1

Notes: 1. Switching times may increase for V

CE

(Clamp) > 0.8 • V

CES

,

higher T

J

or increased R

G

.

2. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

TO-247 (IXGH) AD Outline

1 = Gate

2 = Collector

3 = Emitter

Tab = Collector

TO-263 (IXGA) Outline

Pins: 1 - Gate 2 - Drain

3 - Source 4 - Drain

TO-220 (IXGP) Outline

Fig. 1. Output Characteristics

@ 25ºC

0

5

10

15

20

25

30

35

40

45

50

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

5V

9V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

20

40

60

80

100

120

140

160

180

0 2 4 6 8 101214161820222426

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

7V

9V

11V

13V

Fig. 3. Output Characteristics

@ 125ºC

0

5

10

15

20

25

30

35

40

45

50

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

5V

9V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 48A

I

C

= 24A

I

C

= 12A

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

8.0

5 6 7 8 9 101112131415

V

GE

- Volts

V

CE

- Volts

I

C

= 48A

24A

12A

T

J

= 25ºC

Fig. 6. Input Admittance

0

5

10

15

20

25

30

35

40

45

50

55

60

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0

V

GE

- Volts

I

C

-

Amperes

T

J

= - 40ºC

25ºC

125ºC

IXGA24N120C3 IXGH24N120C3

IXGP24N120C3

IXGA24N120C3

IXGA24N120C3

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