© 2008 IXYS CORPORATION, All rights reserved
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
4 6 8 101214161820
R
G
- Ohms
E
off
- MilliJoules
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 20A
I
C
= 10A
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
200
220
240
260
280
300
320
340
360
4 6 8 101214161820
R
G
- Ohms
t
f
- Nanoseconds
80
120
160
200
240
280
320
360
400
t
d(off)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 20A
I
C
= 10A
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10 11 12 13 14 15 16 17 18 19 20
I
C
- Amperes
E
off
- MilliJoules
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5
Ω
,
V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5
Ω
,
V
GE
= 15V
V
CE
= 600V
I
C
= 20A
I
C
= 10A
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
20
60
100
140
180
220
260
300
340
380
10 11 12 13 14 15 16 17 18 19 20
I
C
- Amperes
t
f
- Nanoseconds
85
90
95
100
105
110
115
120
125
130
t
d(off)
- Nanoseconds
t
f
t
d(off
)
- - - -
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
50
100
150
200
250
300
350
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
80
90
100
110
120
130
140
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 20A
I
C
= 10A
IXGA24N120C3 IXGH24N120C3
IXGP24N120C3
