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SUD06N10-225L-GE3

P1-P3P4-P6P7-P7
Vishay Siliconix
SUD06N10-225L-GE3
Document Number: 62831
S13-0193-Rev. A, 28-Jan-13
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
N-Channel 100 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Power MOSFETs
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()I
D
(A) Q
g
(Typ)
100
0.200 at V
GS
= 10 V
6.5
2.7
0.225 at V
GS
= 4.5 V
6
TO-252
SG
D
Top View
Drain Connected to Tab
Order Number:
SUD06N10-225L-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
100
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
b
T
C
= 25 °C
I
D
6.5
A
T
C
= 125 °C
2.9
Pulsed Drain Current
I
DM
8
Continuous Source Current (Diode Conduction)
I
S
6.5
Avalanche Current
I
AR
5
Repetitive Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH
E
AR
1.25 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
16.7
b
W
T
A
= 25 °C
1.25
a
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Junction-to-Ambient
a
t 10 sec
R
thJA
40 50
°C/W
Steady State
80 100
Junction-to-Case
R
thJC
67.5
Vishay Siliconix
SUD06N10-225L-GE3
www.vishay.com
2
Document Number: 62831
S13-0193-Rev. A, 28-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min.
Typ.
a
Max. Unit.
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
100
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
13
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 100 V, V
GS
= 0 V
1
µA
V
DS
= 100 V, V
GS
= 0 V, T
J
= 125 °C
50
On-State Drain Current
b
I
D(on)
V
DS
=5 V, V
GS
= 10 V
8A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 3 A
0.160 0.200
V
GS
= 10 V, I
D
= 3 A, T
J
= 125 °C
0.350
V
GS
= 4.5 V, I
D
= 1 A
0.180 0.225
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 3 A
8.5 S
Dynamic
a
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, F = 1 MHz
240
pFOutput Capacitance
C
oss
42
Reverse Transfer Capacitance
C
rss
17
Total Gate Charge
c
Q
g
V
DS
= 50 V, V
GS
= 5 V, I
D
= 6.5 A
2.7 4
nC
Gate-Source Charge
c
Q
gs
0.6
Gate-Drain Charge
c
Q
gd
0.7
Tur n - O n D e l ay Time
c
t
d(on)
V
DD
= 50 V, R
L
= 7.5
I
D
6.5 A, V
GEN
= 10 V, R
g
= 2.5
711
ns
Rise Time
c
t
r
812
Turn-Off Delay Time
c
t
d(off)
812
Fall Time
c
t
f
914
Source-Drain Diode Ratings and Characteristics (T
C
= 25 °C)
Pulsed Current
I
SM
8A
Diode Forward Voltage
b
V
SD
I
F
= 6.5 A, V
GS
= 0 V
0.9 1.3 V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 6.5 A, dI/dt = 100 A/µs
35 60 ns
Vishay Siliconix
SUD06N10-225L-GE3
Document Number: 62831
S13-0193-Rev. A, 28-Jan-13
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0
3
6
9
12
15
02468 10
3 V, 2 V
V
GS
= 10 V thru 5 V
4 V
0
3
6
9
12
15
0 3 6 9 12 15
-
Transconductance (S)g
fs
T
C
= - 55 °C
25 °C
125 °C
I
D
- Drain Current (A)
0
50
100
150
200
250
300
350
0 20406080100
V
DS
- Drain-to-Source Voltage (V)
C
- Capacitance (pF)
C
oss
C
iss
C
rss
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
3
6
9
12
15
012345
125 °C
T
C
= - 55 °C
25 °C
- On-Resistance (Ω)
I
D
- Drain Current (A)
R
DS(on)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0 3 6 9 12 15
V
GS
= 10 V
V
GS
= 4.5 V
-
Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0
2
4
6
8
10
012345
V
DS
= 50 V
I
D
= 6.5 A
P1-P3P4-P6P7-P7

SUD06N10-225L-GE3

Mfr. #:
Buy SUD06N10-225L-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SUD20N10-66L-GE3
Lifecycle:
New from this manufacturer.
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