Vishay Siliconix
SUD06N10-225L-GE3
www.vishay.com
4
Document Number: 62831
S13-0193-Rev. A, 28-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62831
.
On-Resistance vs. Junction Temperature
0.75
1.25
0.5
1.0
1.5
1.75
2.0
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature ( )°C
V
GS
= 10 V
I
D
= 3 A
R
DS(on)
− On-Resistance (Normalized)
Source-Drain Diode Forward Voltage
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
10
1
0.2 0.6 0.8 1.2
T
J
= 25 °C
0
0.14.0
T
J
= 175 °C
Maximum Avalanche Drain Current vs. Case Temperature
0
2
4
6
8
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Safe Operating Area
0.1
1
10
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
DC, 10 s,
1 s, 100 ms
Limited by R
DS(on)
*
1 ms
T
C
= 25 °C
Single Pulse
T
C
= 25 °C
Single Pulse
T
C
= 25 °C
Single Pulse
BVDSS Limited
10 ms
100 μs
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
-5
10
-3
10
-2
10
-1
110
0.2
0.1
Duty Cycle = 0.5
100
0.05
0.02
Single Pulse
10
-4
