SSM6K403TU,LF Datasheet SSM6K403TU,LF | P1-P3

SSM6K403TU

2014-03-01

1

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS

SSM6K403TU

○ Power Management Switch Applications

○ High-Speed Switching Applications

• 1.5V drive

• Low ON-resistance: R

on

= 66mΩ (max) (@V

GS

= 1.5V)

R

on

= 43mΩ (max) (@V

GS

= 1.8V)

R

on

= 32mΩ (max) (@V

GS

= 2.5V)

R

on

= 28mΩ (max) (@V

GS

= 4.0V)

Absolute Maximum Ratings

(Ta = 25˚C) (Note)

Characteristic Symbol Rating Unit

Drain-source voltage V

DSS

20 V

Gate-source voltage V

GSS

±10 V

DC I

D

4.2

Drain current

Pulse I

DP

8.4

A

Drain power dissipation P

D

(Note1) 500 mW

Channel temperature T

ch

150 °C

Storage temperature T

stg

−55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm

2

)

Unit: mm

0.3-0.05

6

1.7±0.1

2.1±0.1

1.3±0.1

1

2

0.650.65

3

2.0±0.1

5

4

0.7±0.05

+0.1

0.166±0.05

JEDEC ―

JEITA ―

TOSHIBA 2-2T1D

Weight: 7.0mg (typ.)

UF6

1,2,5,6 : Drain

3 : Gate

4 : source

Start of commercial production

2008-01

SSM6K403TU

2014-03-01

2

Electrical Characteristics

(

Ta = 25˚C

)

Characteristic Symbol Test Condition Min Typ. Max Unit

V

(BR) DSS

I

D

= 1 mA, V

GS

= 0 V 20 ⎯ ⎯

Drain-source breakdown voltage

V

(BR) DSX

I

D

= 1 mA, V

GS

= -10V 12 ⎯ ⎯

V

Drain cutoff current I

DSS

V

DS

=20 V, V

GS

= 0 V ⎯ ⎯ 1 μA

Gate leakage current I

GSS

V

GS

= ±10 V, V

DS

= 0 V ⎯ ⎯ ±1 μA

Gate threshold voltage V

th

V

DS

= 3 V, I

D

= 1 mA 0.35 ⎯ 1.0 V

Forward transfer admittance |Y

fs

| V

DS

= 3 V, I

D

= 3.0 A (Note2) 10 20 ⎯ S

I

D

= 3.0 A, V

GS

= 4.0 V (Note2) ⎯ 19 28

I

D

= 3.0 A, V

GS

= 2.5 V (Note2) ⎯ 23 32

I

D

= 1.0 A, V

GS

= 1.8 V (Note2) ⎯ 28 43

Drain-source ON-resistance R

DS (ON)

I

D

= 0.5 A, V

GS

= 1.5 V (Note2) ⎯ 35 66

mΩ

Input capacitance C

iss

⎯ 1050 ⎯

Output capacitance C

oss

⎯ 175 ⎯

Reverse transfer capacitance C

rss

V

DS

= 10 V, V

GS

= 0 V, f = 1 MHz

⎯ 160 ⎯

pF

Total Gate Charge Q

g

⎯ 16.8 ⎯

Gate-Source Charge Q

gs

⎯ 12.1 ⎯

Gate-Drain Charge Q

gd

V

DD

= 10 V, I

D

= 4.2 A

V

GS

= 4 V

⎯ 4.7 ⎯

nC

Turn-on time t

on

⎯ 18 ⎯

Switching time

Turn-off time t

off

V

DD

= 10 V, I

D

= 1 A

V

GS

= 0 to 2.5 V, R

G

= 4.7 Ω

⎯ 32 ⎯

ns

Drain-source forward voltage V

DSF

I

D

= -4.2 A, V

GS

= 0 V (Note2)

⎯ -0.8 -1.2 V

Note 2: Pulse test

SSM6K403TU

2014-03-01

3

Switching Time Test Circuit

Marking Equivalent Circuit

(top view)

Notice on Usage

V

th

can be expressed as the voltage between gate and source when the low operating current value is I

D

= 1 mA for

this product. For normal switching operation, V

GS

(on)

requires a higher voltage than V

th

and V

GS (off)

requires a lower

voltage than V

th.

(The relationship can be established as follows: V

GS (off)

< V

th

< V

GS (on).

)

Take this into consideration when using the device.

Handling Precaution

When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is

protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that

come into direct contact with devices should be made of antistatic materials.

2.5 V

t

on

t

off

(b) V

IN

(c) V

OUT

0 V

V

DD

V

DS (ON)

t

r

t

f

10%

90%

10%

(a) Test Circuit

V

DD

= 10 V

R

G

= 4.7 Ω

Duty ≤ 1%

V

IN

: t

r

, t

f

< 5 ns

Common Source

Ta = 25°C

0

2.5 V

IN

OUT

V

DD

10 μs

R

G

6

KND

4

1 2 3

5

4

123

65

SSM6K403TU,LF

SSM6K403TU,LF

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