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SSM6K403TU,LF

P1-P3P4-P6P7-P7
SSM6K403TU
2014-03-01
4
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
R
DS (ON)
– I
D
Drain-source voltage V
DS
(V)
I
D
– V
DS
Drain current I
D
(A)
0
6
0
0.2 0.4 0.6
4
VGS = 1.2 V
10 V
2
Common Source
Ta = 25 °C
1.8 V
2.5 V
1.5 V
Gate-source voltage V
GS
(V)
I
D
– V
GS
Drain current I
D
(A)
10
0
0.1
1
0.001
0.01
0.0001
2.0
− 25 °C
Ta = 100 °C
25 °C
1.0
V
th
– Ta
Gate threshold voltage V
th
(V)
1.0
0
−50 0 15050 100
R
DS (ON)
– Ta
Drain-source ON-resistance
R
DS (ON)
(mΩ)
0
−50 0 50 150
50
100
100
Drain-source ON-resistance
R
DS (ON)
(mΩ)
0
Gate-source voltage V
GS
(V)
5
0
R
DS (ON)
– V
GS
100
50
10
− 25 °C
Ta = 100 °C
25 °C
I
D
=3.0 A
Common Source
Ta = 25°C
Common Source
V
DS
= 3 V
VGS = 4.0V
Drain current I
D
(A)
Drain-source ON-resistance
R
DS (ON)
(mΩ)
0 2
4
6
0
100
50
1.5 V
Common Source
Ta = 25°C
8
8
0.5
Common Source
V
DS
= 3 V
I
D
= 1 mA
I
D
= 0.5 A / V
GS
= 1.5 V
3.0 A / 4.0 V
4.0 V
3.0 A / 2.5 V
1.0 A / 1.8 V
2.5 V
1.8 V
Common Source
SSM6K403TU
2014-03-01
5
Drain current I
D
(A)
Forward transfer admittance
⎪
Y
fs
⎪
(S)
|Y
fs
| – I
D
0.1
10
1
100
0.1
1
3
0.3
0.01
Drain-source voltage V
DS
(V)
C – V
DS
Capacitance C (pF)
10
0.1 1 10 100
100
1000
300
500
30
50
Common Source
Ta = 25°C
f = 1 MHz
V
GS
= 0 V
Drain current I
D
(A)
Switching time t (ns)
t – I
D
1
0.01
100
0.1
1000
1 10
10
t
f
t
on
t
r
Common Source
V
DD
= 10 V
V
GS
= 0 ∼ 2.5 V
Ta = 25 °C
R
G
= 4.7 Ω
Total Gate Charge Qg (nC)
Dynamic Input Characteristic
Gate-Source voltage V
GS
(V)
0
0
VDD=10V
20 40
4
8
50
10
6
2
Common Source
I
D
= 4.2A
Ta = 25°C
VDD=16V
30 10
Drain reverse current I
DR
(A)
Drain-source voltage V
DS
(V)
I
DR
– V
DS
10
0
0.1
1
0.001
0.01
–0.5 –1.0
−25 °C
Ta =100 °C
25 °C
–1.5
Common Source
V
GS
= 0 V
G
D
S
I
DR
t
off
Common Source
V
DS
= 3 V
Ta = 25°C
10
30
C
iss
C
oss
C
rss
5000
3000
10000
SSM6K403TU
2014-03-01
6
Ambient temperature T
a
(°C)
P
D
– T
a
Drain power dissipation P
D
(mW)
800
0
200
120
100 140
400
600
160
1000
80 60 40
20 0 -20 -40
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm
2
)
Pulse width t
w
(s)
r
th
– t
w
Transient thermal impedance Rth (°C/W)
0.001 10000.01 0.1 1 100
10
100
100
1
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm
2
)
10
P1-P3P4-P6P7-P7

SSM6K403TU,LF

Mfr. #:
Buy SSM6K403TU,LF
Manufacturer:
Toshiba
Description:
MOSFET Small-signal MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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