BC 808-25 E6327

P1-P3 P4-P6 P7-P9 P10-P11

2007-06-08

1

BC807.../BC808...

PNP Silicon AF Transistor

• For general AF applications

• High collector current

• High current gain

• Low collector-emitter saturation voltage

• Complementary type:

BC817.../W, BC818.../W (NPN)

• Pb-free (RoHS compliant) package

1)

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BC807-16

BC807-16W

BC807-25

BC807-25W

BC807-40

BC807-40W

BC808-25

BC808-25W

BC808-40

BC808-40W

5As

5As

5Bs

5Bs

5Cs

5Cs

5Fs

5Fs

5Gs

5Gs

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SOT23

SOT323

SOT23

SOT323

SOT23

SOT323

SOT23

SOT323

SOT23

SOT323

1

Pb-containing package may be available upon special request

2007-06-08

2

BC807.../BC808...

Maximum Ratings

Parameter

Symbol Value Unit

Collector-emitter voltage

BC807...

BC808...

V

CEO

45

25

V

Collector-base voltage

BC807...

BC808...

V

CBO

50

30

Emitter-base voltage V

EBO

5

Collector current I

C

500 mA

Peak collector current I

CM

1000

Base current I

B

100

Peak base current I

BM

200

Total power dissipation-

T

S

≤ 79 °C BC807, BC808

T

S

≤ 130 °C BC807W, BC808W

P

tot

330

250

mW

Junction temperature T

j

150 °C

Storage temperature T

stg

-65 ... 150

Thermal Resistance

Parameter

Symbol Value Unit

Junction - soldering point

1)

BC807, BC808

BC807W, BC808W

R

thJS

≤ 215

≤ 80

K/W

1

For calculation of R

thJA

please refer to Application Note Thermal Resistance

2007-06-08

3

BC807.../BC808...

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

C

= 10 mA, I

B

= 0 , BC807...

I

C

= 10 mA, I

B

= 0 , BC808...

V

(BR)CEO

45

25

-

-

-

-

V

Collector-base breakdown voltage

I

C

= 10 µA, I

E

= 0 , BC807...

I

C

= 10 µA, I

E

= 0 , BC808...

V

(BR)CBO

50

30

-

-

-

-

Emitter-base breakdown voltage

I

E

= 10 µA, I

C

= 0

V

(BR)EBO

5 - -

Collector-base cutoff current

V

CB

= 25 V, I

E

= 0

V

CB

= 25 V, I

E

= 0 , T

A

= 150 °C

I

CBO

-

-

-

-

0.1

50

µA

Emitter-base cutoff current

V

EB

= 4 V, I

C

= 0

I

EBO

- - 100 nA

DC current gain

1)

I

C

= 100 mA, V

CE

= 1 V, h

FE

-grp. 16

I

C

= 100 mA, V

CE

= 1 V, h

FE

-grp. 25

I

C

= 100 mA, V

CE

= 1 V, h

FE

grp. 40

I

C

= 500 mA, V

CE

= 1 V

h

FE

100

160

250

40

160

250

350

-

250

400

630

-

-

Collector-emitter saturation voltage

1)

I

C

= 500 mA, I

B

= 50 mA

V

CEsat

- - 0.7 V

Base emitter saturation voltage

1)

I

C

= 500 mA, I

B

= 50 mA

V

BEsat

- - 1.2

1

Pulse test: t < 300µs; D < 2%

P1-P3 P4-P6 P7-P9 P10-P11

BC 808-25 E6327

Mfr. #:

Buy BC 808-25 E6327

Manufacturer:

Infineon Technologies

Description:

Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR

Lifecycle:

New from this manufacturer.

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