BC 808-25 E6327

2007-06-08
4
BC807.../BC808...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
I
C
= 50 mA, V
CE
= 5 V, f = 100 MHz
f
T
- 200 - MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
- 8 - pF
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
- 60 -
2007-06-08
5
BC807.../BC808...
DC current gain h
FE
= ƒ(I
C
)
V
CE
= 1 V
h
FE
-grp. 16
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
A
I
C
1
10
2
10
3
10
h
FE
105 °C
85 °C
65 °C
25 °C
-40 °C
DC current gain h
FE
= ƒ(I
C
)
V
CE
= 1 V
h
FE
-grp. 25
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
A
I
C
1
10
2
10
3
10
h
FE
105 °C
85 °C
65 °C
25 °C
-40 °C
DC current gain h
FE
= ƒ(I
C
)
V
CE
= 1 V
h
FE
-grp. 40
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
A
I
C
1
10
2
10
3
10
h
FE
105 °C
85 °C
65 °C
25 °C
-40 °C
Collector-emitter saturation voltage
I
C
= ƒ(V
CEsat
), h
FE
= 10
0
10
EHP00215
CEsat
V
0.4 V 0.8
-1
10
0
10
1
3
10
5
5
Ι
C
mA
5
2
10
0.2 0.6
-50
25
150
˚C
˚C
˚C
2007-06-08
6
BC807.../BC808...
Base-emitter saturation voltage
I
C
= ƒ(V
BEsat
), h
FE
= 10
0
10
EHP00214
BEsat
V
2.0 V 4.0
-1
10
0
10
1
3
10
5
5
Ι
C
mA
5
2
10
1.0 3.0
˚C
-50
25
˚C
˚C
150
Collector cutoff current I
CBO
= ƒ(T
A
)
V
CBO
= 25 V
0
10
EHP00213
A
T
150
0
5
10
Ι
CBO
nA
50 100
1
10
2
10
4
10
˚C
typ
max
10
3
Transition frequency f
T
= ƒ(I
C
)
V
CE
= parameter in V, f = 2 GHz
10
EHP00210
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
f
MHz
Ι
Collector-base capacitance C
cb
= ƒ(V
CB
)
Emitter-base capacitance C
eb
= ƒ(V
EB
)
0 2 4 6 8 10 12 14 16
V
20
V
CB
/V
EB
0
5
10
15
20
25
30
35
40
45
50
55
pF
65
C
CB
/
C
EB
CCB
CEB

BC 808-25 E6327

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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