2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 7 of 15
NXP Semiconductors
2N7002P
60 V, 360 mA N-channel Trench MOSFET
V
DS
> I
D
× R
DSon
(1) T
amb
= 25 °C
(2) T
amb
= 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as
a function of ambient temperature; typical
values
I
D
= 0.25 mA; V
DS
= V
GS
(1) maximum values
(2) typical values
(3) minimum values
f = 1 MHz; V
GS
= 0 V
(1) C
iss
(2) C
oss
(3) C
rss
Fig 12. Gate-source threshold voltage as a function of
ambient temperature
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
V
GS
(V)
0.0 5.04.02.0 3.01.0
017aaa021
0.4
0.6
0.2
0.8
1.0
I
D
(A)
0.0
(1) (2)
(2) (1)
T
amb
(°C)
−60 180120060
017aaa022
1.2
0.6
1.8
2.4
a
0.0
T
amb
(°C)
−60 180120060
017aaa023
1.0
2.0
3.0
V
GS(th)
(V)
0.0
(2)
(1)
(3)
017aaa024
V
DS
(V)
10
−1
10
2
101
10
10
2
C
(pF)
1
(2)
(1)
(3)
