Characteristics STPS61170C
2/7 Doc ID 11643 Rev 2
1 Characteristics
When the diodes 1 and 2 are used simultaneously :
ΔT
j
(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
To evaluate the conduction losses use the following equation :
P = 0.54 x I
F(AV)
+ 0.0043 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 170 V
I
F(RMS)
Forward rms current 80 A
I
F(AV)
Average forward current T
C
= 150 °C δ = 0.5
Per diode
Per device
30
A
60
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 500 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 31800 W
V
ARM
(1)
Maximum repetitive peak avalanche voltage
t
p
= 1 µs, T
j
< 150 °C,
I
AR
< 47 A
200 V
V
ASM
(1)
Maximum single pulse peak avalanche voltage
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(2)
175 °C
dV/dt Critical rate of rise reverse voltage 10000 V/µs
1. Refer to Figure 11
2. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
<
1
Rth(j-a)
Table 3. Thermal resistance parameters
Symbol Parameter Value Unit
R
th (j-c)
Junction to case
Per diode
To t al
0.9
0.6
°C/W
R
th (c)
Coupling 0.3
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
60 µA
T
j
= 125 °C 16 60 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 30 A
0.84
V
T
j
= 125 °C 0.63 0.67
T
j
= 25 °C
I
F
= 60 A
0.92
T
j
= 125 °C 0.76 0.80
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
