Characteristics STPS61170C
4/7 Doc ID 11643 Rev 2
Figure 11. Reverse safe operating area(t
p
< 1µs and T
j
< 150 °C)
Figure 7. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 8. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170
I
R
(µA)
T
j
=150°C
T
j
=125°C
T
j
=25°C
T
j
=100°C
T
j
=75°C
T
j
=50°C
V
R
(V)
100
1000
10000
1 10 100 1000
C(pF)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
V
R
(V)
Figure 9. Forward voltage drop versus
forward current
(per diode, low level)
Figure 10. Forward voltage drop versus
forward current
(per diode, high level)
I
FM
(A)
0
5
10
15
20
25
30
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Tj=25°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Typical values)
Tj=125°C
(Typical values)
V
FM
(V)
1
10
100
1000
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
Tj=25°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Typical values)
Tj=125°C
(Typical values)
I
FM
(A)
V
FM
(V)
40
42
44
46
48
50
52
54
56
58
60
170 175 180 185 190 195 200 205 210 215 220
V (V)
arm
I(A)
arm