H - 2
© 2000 IXYS All rights reserved
Symbol Conditions Ratings
I
D
T
VJ
= 125°C; V = 0,8x V
BO
20 µA
V
BO
V
BO
(T
VJ
) = V
BO, 25°C
[1 +
K
T
(T
VJ
- 25°C)]
I
RMS
f = 50 HZ; T
amb
= 50°C1.4A
connection pins soldered to printed circuit
(conductor 0,035x2mm)
I
AVM
0.9 A
I
SM
t
p
= 0.1 ms; T
amb
= 50°C non repetitive 200 A
I²t t
p
= 0.1 ms; T
amb
= 50°C2A
2
s
T
amb
-40...+125 °C
T
stg
-40...+125 °C
T
VJm
125 °C
K
T
Temperatur coefficient of V
BO
2·10
-3
K
-1
K
P
coefficient for energy per pulse E
P
(material constant) 700 K/Ws
R
thJA
- natural convection 60 K/W
- with air speed 2 m/s 45 K/W
Weight 1g
Symbol Conditions Characteristic Values
I
BO
T
VJ
=25°C15mA
I
H
T
VJ
=25°C30mA
V
H
T
VJ
=25°C 4 - 8 V
(dv/dt)
C
T
VJ
=50°C; V
D
= 0.67·(V
BO
+ 100V) > 1000 V/µs
(di/dt)
C
T
VJ
= 125°C; V
D
= V
BO
; I
T
= 80A; f = 50 Hz 200 A/µs
t
q(typ)
T
VJ
= 125°CV
D
= 0.67·V
BO
; V
R
= 0V 150 µs
dV/dt
(lin.)
= 200V/µs; I
T
= 80A; di/dt = -10A/µs
V
T
T
VJ
=125°C; I
T
= 5A 1.7 V
V
(TO)
For power-loss calculations only 1.1 V
r
T
T
VJ
= 125°C 0.12 Ω
V
BO
Standard
V Types
600 ±50 IXBOD 1 -06
700 ±50 IXBOD 1 -07
800 ±50 IXBOD 1 -08
900 ±50 IXBOD 1 -09
1000 ±50 IXBOD 1 -10
V
BO
= 600-1000V
I
AVM
= 0.9 A
IXBOD 1 -06...10
Dimensions in mm (1 mm = 0.0394")
A
K
KA
Single Breakover Diode
030
IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747
