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PD54003L-E

P1-P3P4-P6P7-P9P10-P11
May 2011 Doc ID 11957 Rev 3 1/11
11
PD54003L-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode, lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ P
OUT
=3 W mith 20dB gain@500 MHz
■ New leadless plastic package
■ ESD protection
■ Supplied in tape and reel of 3 K units
■ In compliance with 2002/95/EC european
directive
Description
The PD54003L-E is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial application. It operates
at 7 V in common source mode at frequencies of
up to 1 GHz. PD54003L-E boasts the excellent
gain, linearity and reliability of STH1LV latest
LDMOS technology mounted in the innovative
leadless SMD plastic package, PowerFLAT™.
PD54003L-E’s superior linearity performances
makes it an ideal solution for car mobile radio.
Figure 1. Pin configuration
PowerFLAT™(5x5)
TOP VIEW
Table 1. Device summary
Order code Marking Package Packaging
PD54003L-E 54003 PowerFLAT™(5x5) Tape and reel
www.st.com
Contents PD54003L-E
2/11 Doc ID 11957 Rev 3
Contents
Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.1 Typical performance (broadband) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
PD54003L-E Maximum ratings
Doc ID 11957 Rev 3 3/11
1 Maximum ratings
(T
CASE
=25°C)
Table 2. Absolute maximum ratings (T
CASE
=25°C)
Symbol Parameter Value Unit
V
(BR)DSS
Drain-source voltage 25 V
V
GS
Gate-source volatge -0.5 to+15 V
I
D
Drain current 4 A
P
DISS
Power dissipation (@T
C
= 70°C) 19.5 W
T
stg
Storage temperature – 65 to +150 °C
T
j
Operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
th(j-c)
Junction-case thermal resistance 4.1 °C/W
P1-P3P4-P6P7-P9P10-P11

PD54003L-E

Mfr. #:
Buy PD54003L-E
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic Fam
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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