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PD54003L-E

P1-P3P4-P6P7-P9P10-P11
Electrical specification PD54003L-E
4/11 Doc ID 11957 Rev 3
2 Electrical specification
(T
CASE
=25°C)
Table 4. Static
Symbol Test conditions Min. Typ. Max. Unit
I
DSS
V
GS
=0V, V
DS
=25V 1 µA
I
GSS
V
GS
=5V, V
DS
=0V 1 µA
V
GS(Q)
V
DS
=10V, I
D
=50mA 2.0 3.3 V
V
DS(ON)
V
GS
=10V, I
D
=0.5A 0.13 0.16 V
g
fs
V
DS
=10V, I
D
=3.2A TBD mho
C
iss
C
oss
C
rss
V
GS
=0V, V
DS
=7.5V, f=1MHz
54
43
4
pF
pF
pF
Table 5. Dynamic
Symbol Test conditions Min. Typ. Max. Unit
P
OUT
V
DD
=7.5V, I
DQ
=50mA, f=500MHz 3 - W
G
P
V
DD
=7.5V, I
DQ
=50mA, P
OUT
=3W, f=500MHz 16 20 - dB
ηDV
DD
=7.5V, I
DQ
=50mA, P
OUT
=3W, f=500MHz 50 55 - %
Load
mismatch
V
DD
=9.5V, I
DQ
=50mA, P
OUT
=3W, f=500MHz
All phase angles
20:1 - VSWR
Table 6. ESD protection characteristics
Test conditions Class
Human body model 2
Machine model M3
Table 7. Moisture sensitivity level
Test methodology Rating
J-STD-020B MSL 3
PD54003L-E Typical performances
Doc ID 11957 Rev 3 5/11
3 Typical performances
Figure 2. Capacitance vs supply voltage Figure 3. Output power vs input power
Figure 4. Power gain vs output power Figure 5. Efficiency vs output power
Figure 6. Output power vs bias current Figure 7. Output power vs gate-source
voltage
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Typical performances PD54003L-E
6/11 Doc ID 11957 Rev 3
3.1 Typical performance (broadband)
Figure 8. Efficiency vs bias current Figure 9. Output power vs supply voltage
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Figure 10. Power gain vs frequency Figure 11. Efficiency vs frequency
Figure 12. Return loss vs frequency
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P1-P3P4-P6P7-P9P10-P11

PD54003L-E

Mfr. #:
Buy PD54003L-E
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic Fam
Lifecycle:
New from this manufacturer.
Delivery:
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