May 2008 Rev 1 1/10
STTH3R04
Ultrafast recovery diode
Features
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
Description
The STTH3R04 series uses ST's new 400 V
planar Pt doping technology. The STTH3R04 is
specially suited for switching mode base drive and
transistor circuits.
Packaged in axial and surface mount packages,
this device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
Table 1. Device summary
I
F(AV)
3 A
V
RRM
400 V
T
j (max)
175 °C
V
F (typ)
0.9 V
t
rr (typ)
18 ns
KA
DO-15
STTH3R04Q
DO-201AD
STTH3R04
SMB
STTH3R04U
SMC
STTH3R04S
Band indicates cathode side.
www.st.com
Characteristics STTH3R04
2/10
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.9 x I
F(AV)
+ 0.083 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 400 V
I
F(AV)
Average forward current, δ = 0.5
DO-15 T
lead
= 70 °C
3.0 A
DO-201AD T
lead
= 80 °C
SMB T
lead
= 70 °C
SMC T
lead
= 100 °C
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 60 A
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature
(1)
1. On infinite heatsink with 10 mm lead length
175 °C
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead
Lead length = 10 mm
on infinite heatsink
DO-15 25
°C/W
DO-201AD 22
R
th(j-l)
Junction to lead
SMB 25
SMC 17
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min Typ Max Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2 %
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
5
µA
T
j
= 125 °C 5 50
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2 %
Forward voltage drop
T
j
= 25 °C
I
F
= 3.0 A
1.5
VT
j
= 100 °C 1.0 1.25
T
j
= 150 °C 0.9 1.15
STTH3R04 Characteristics
3/10
Table 5. Dynamic characteristics (Tj = 25 °C unless otherwise stated)
Symbol Parameter
Test conditions
Min Typ Max Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25 °C
35
ns
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25 °C
18 25
I
RM
Reverse recovery current
I
F
= 3.0 A, dI
F
/dt = -200 A/µs,
V
R
= 320 V, T
j
= 125 °C
45.5 A
t
fr
Forward recovery time
I
F
= 3.0 A dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25 °C
75 ns
V
FP
Forward recovery voltage
I
F
= 3.0 A dI
F
/dt = 100 A/µs
2.5 V
Figure 1. Conduction losses versus
average forward current
Figure 2. Forward voltage drop versus
forward current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
P(W)
δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1
T
δ
=tp/T
tp
I
F(AV)
(A)
0
5
10
15
20
25
30
35
40
45
50
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
I
FM
(A)
T
J
=150°C
(Maximum values)
T
J
=150°C
(Maximum values)
T
J
=150°C
(Typical values)
T
J
=150°C
(Typical values)
T
J
=25°C
(Maximum values)
T
J
=25°C
(Maximum values)
V
FM
(V)
Figure 3. Relative variation of thermal
impedance junction to lead versus
pulse duration, DO-15 (epoxy FR4,
copper thickness = 35 µm)
Figure 4. Relative variation of thermal
impedance junction to ambient
versus pulse duration, DO-201AD
(epoxy FR4, copper
thickness = 35 µm)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j-l)
/R
th(j-l)
Single pulse
DO-15
L
leads
=10mm
t
P
(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j-a)
/R
th(j-a)
Single pulse
DO-201AD
L
leads
=10mm
t
P
(s)

STTH3R04RL

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Rectifiers Ultrafast recovery Diode
Lifecycle:
New from this manufacturer.
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