OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

STTH3R04RL

P1-P3P4-P6P7-P9P10-P10
Characteristics STTH3R04
4/10
Figure 5. Relative variation of thermal
impedance junction to ambient
versus pulse duration, SMB (epoxy
FR4, copper thickness = 35 µm)
Figure 6. Relative variation of thermal
impedance junction to ambient
versus pulse duration, SMC
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j-a)
/R
th(j-a)
Single pulse
SMB
S
Cu
=1cm²
t
P
(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j-a)
/R
th(j-a)
Single pulse
SMC
S
Cu
=1cm²
t
P
(s)
Figure 7. Junction capacitance versus
reverse voltage applied
(typical values)
Figure 8. Reverse recovery charges versus
dI
F
/dt (typical values)
1
10
100
1 10 100 1000
C(pF)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
V
R
(V)
0
10
20
30
40
50
60
70
80
90
100
10 100 1000
Q
RR
(nC)
I
F
= 3 A
V
R
=320 V
T
j
=125 °C
T
j
=25 °C
dI
F
/dt(A/µs)
Figure 9. Reverse recovery time versus
dI
F
/dt (typical values)
Figure 10. Peak reverse recovery current
versus dI
F
/dt (typical values)
0
10
20
30
40
50
60
70
80
90
100
10 100 1000
t
RR
(ns)
I
F
= 3 A
V
R
=320 V
T
j
=125 °C
T
j
=25 °C
dI
F
/dt(A/µs)
0
1
2
3
4
5
6
7
8
10 100 1000
I
RM
(A)
I
F
= 3 A
V
R
=320 V
T
j
=125 °C
T
j
=25 °C
dI
F
/dt(A/µs)
STTH3R04 Characteristics
5/10
Figure 11. Relative variations of dynamic
parameters versus junction
temperature
Figure 12. Transient peak forward voltage
versus dI
F
/dt (typical values)
Figure 13. Forward recovery time versus
dI
F
/dt (typical values)
Figure 14. Thermal resistance versus
lead length, DO-15
Figure 15. Thermal resistance junction to
ambient versus copper surface
under each lead, DO-201AD (epoxy
FR4, copper thickness = 35 µm)
Figure 16. Thermal resistance versus lead
length, DO-201AD
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125 150
Q
RR
;I
RM
[T
j
]/Q
RR
;I
RM
[T
j
=125°C]
I
RM
Q
RR
I
F
= 3 A
V
R
=320 V
T
j
(°C)
0
5
10
15
20
25
0 50 100 150 200 250 300 350 400 450 500
V
Fp
(V)
I
F
=3 A
T
j
=125 °C
dI
F
/dt(A/µs)
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350 400 450 500
t
FR
(ns)
I
F
=3 A
T
j
=125 °C
dI
F
/dt(A/µs)
0
20
40
60
80
100
120
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
R
th(j-a)
(°C/W)
DO-15
L
leads
(mm)
0
10
20
30
40
50
60
70
80
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
R
th(j-a)
(°C/W)
DO-201AD
S
Cu
(cm²)
0
10
20
30
40
50
60
70
80
90
100
5 10152025
R
th
(°C/W)
DO-201AD
R
th(j-a)
R
th(j-l)
L
leads
(mm)
Package information STTH3R04
6/10
Figure 17. Thermal resistance junction to ambient versus copper surface under
each lead, SMB, SMC (epoxy FR4, copper thickness = 35 µm)
2 Package information
● Epoxy meets UL94, V0
● Cooling method: by conduction (C)
In order to meet environmental requirements, ST offers these devices in ECOPACK
®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at www.st.com.
0
20
40
60
80
100
120
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
R
th(j-a)
(°C/W)
SMB
SMC
S
CU
(cm²)
Table 6. DO201AD dimensions
Ref.
Dimensions
Millimeters Inches
Min. Max. Min. Max.
A 9.50 0.374
B 25.40 1.000
C 5.30 0.209
D 1.30 0.051
E 1.25 0.049
Notes 1 - The lead diameter ø D is not
controlled over zone E
2 - The minimum length which must stay
straight between the right angles after
bending is 0.59"(15mm)
ØC
ØD
A
EE
Note 2
Note 1 Note 1
BB
P1-P3P4-P6P7-P9P10-P10

STTH3R04RL

Mfr. #:
Buy STTH3R04RL
Manufacturer:
STMicroelectronics
Description:
Rectifiers Ultrafast recovery Diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet