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AUIRFP4568

P1-P3P4-P6P7-P9
AUIRFP4568
V
DSS
150V
R
DS(on)
typ.
4.8m
max.
5.9m
I
D
171A
Features
Advanced Planar Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
1 2015-10-21
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 171
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 121
I
DM
Pulsed Drain Current 684
P
D
@T
C
= 25°C Maximum Power Dissipation 517 W
Linear Derating Factor 3.45 W/°C
V
GS
Gate-to-Source Voltage ± 30 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 763
mJ
I
AR
Avalanche Current See Fig.14,15, 22a, 22b A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt Peak Diode Recovery dv/dt 18.5 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.29
°C/W
R
CS
Case-to-Sink, Flat, Greased Surface 0.24 –––
R
JA
Junction-to-Ambient ––– 40
TO-247AC
AUIRFP4568
S
D
G
Base part number Package Type
Standard Pack
Form Quantity
AUIRFP4568 TO-247AC Tube 25 AUIRFP4568
Orderable Part Number
G D S
Gate Drain Source
AUIRFP4568
2 2015-10-21
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.144mH, R
G
= 25, I
AS
= 103A, V
GS
=10V. Part not recommended for use above this value.
I
SD
103A, di/dt 360A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width 400µs; duty cycle 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while VDS is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
of approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 150 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C Reference to 25°C, I
D
= 5mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– 4.8 5.9
m
V
GS
= 10V, I
D
= 103A
V
GS(th)
Gate Threshold Voltage 3.0 ––– 5.0 V V
DS
= V
GS
, I
D
= 250µA
gfs Forward Trans conductance 162 ––– ––– S V
DS
= 50V, I
D
= 103A
R
G
Internal Gate Resistance ––– 1.0 –––
I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
=150 V, V
GS
= 0V
––– ––– 250 V
DS
=150V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge ––– 151 227
nC
I
D
= 103A
Q
gs
Gate-to-Source Charge ––– 52 ––– V
DS
= 75V
Q
gd
Gate-to-Drain Charge ––– 55 ––– V
GS
= 10V
Q
sync
Total Gate Charge Sync. (Q
g
– Q
gd
) ––– 96 –––
t
d(on)
Turn-On Delay Time ––– 27 –––
ns
V
DD
= 98V
t
r
Rise Time ––– 119 –––
I
D
= 103A
t
d(off)
Turn-Off Delay Time ––– 47 –––
R
G
= 1.0
t
f
Fall Time ––– 84 –––
V
GS
= 10V
C
iss
Input Capacitance ––– 10470 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 977 –––
V
DS
= 50V
C
rss
Reverse Transfer Capacitance ––– 203 –––
ƒ = 1.0MHz, See Fig. 5
C
oss eff.
(ER)
Effective Output Capacitance (Energy Related)
––– 897 –––
V
GS
=0V, V
DS
=0V to 120V
(see fig.11)
C
oss eff.
(TR)
Effective Output Capacitance (Time Related)
––– 1272 ––– V
GS
= 0V, V
DS
= 0V to 120V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 171
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 684
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C,I
S
= 103A,V
GS
= 0V 
t
rr
Reverse Recovery Time
––– 110 –––
ns
T
J
= 25°C
––– 133 ––– T
J
= 125°C
Q
rr
––– 515 –––
nC
T
J
= 25°C
––– 758 ––– T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 8.8 ––– A T
J
= 25°C
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Reverse Recovery Charge
V
R
=100V
I
F
= 103A
di/dt = 100A/µs 
AUIRFP4568
3 2015-10-21
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 1 Typical Output Characteristics
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
60µs PULSE WIDTH
Tj = 175°C
4.5V
3 4 5 6 7 8 9
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 50V
60µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120140160180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 103A
V
GS
= 10V
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
1000000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 50 100 150 200
Q
G
,
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 120V
V
DS
= 75V
VDS= 30V
I
D
= 103A
P1-P3P4-P6P7-P9

AUIRFP4568

Mfr. #:
Buy AUIRFP4568
Manufacturer:
Infineon / IR
Description:
MOSFET N-CHANNEL 100+
Lifecycle:
New from this manufacturer.
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