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AUIRFP4568

P1-P3P4-P6P7-P9
AUIRFP4568
4 2015-10-21
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 11. Typical C
OSS Stored Energy
Fig 12. Maximum Avalanche Energy vs. Drain Current
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V
SD
, Source-to-Drain Voltage (V)
1.0
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
20
40
60
80
100
120
140
160
180
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Temperature ( °C )
140
145
150
155
160
165
170
175
180
185
190
V
(
B
R
)
D
S
S
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
(
V
)
Id = 5mA
0 20 40 60 80 100 120 140 160
V
DS,
Drain-to-Source Voltage (V)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
E
n
e
r
g
y
(
µ
J
)
Fig 9. Maximum Drain Current vs. Case Temperature
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
500
1000
1500
2000
2500
3000
3500
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 21.5A
29.3A
BOTTOM 103A
AUIRFP4568
5 2015-10-21
Fig 14. Avalanche Current vs. Pulse width
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. P
D (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av = Allowable avalanche current.
7. T
= Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
t
av = Average time in avalanche.
D = Duty cycle in avalanche = t
av ·f
Z
thJC(D, tav) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = T/ Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 15. Maximum Avalanche Energy
vs. Temperature
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
°
C
/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
I (sec)
0.06336 0.000278
0.11088 0.005836
0.11484 0.053606
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
C
C
Ci= iRi
Ci= iRi
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming

j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
900
E
A
R
,
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
I
D
= 103A
AUIRFP4568
6 2015-10-21
Fig 16. Threshold Voltage vs. Temperature
Fig. 18 - Typical Recovery Current vs. di
f/dt
Fig. 19 - Typical Stored Charge vs. di
f/dt
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
I
D
= 1.0mA
ID = 1.0A
0 200 400 600 800 1000
di
F
/dt (A/µs)
0
10
20
30
40
50
60
I
R
R
(
A
)
I
F
= 68A
V
R
= 100V
T
J
= 25°C
T
J
= 125°C
Fig. 17 - Typical Recovery Current vs. dif/dt
0 200 400 600 800 1000
di
F
/dt (A/µs)
0
10
20
30
40
50
60
70
I
R
R
(
A
)
I
F
= 103A
V
R
= 100V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/µs)
400
800
1200
1600
2000
2400
2800
3200
3600
Q
R
R
(
A
)
I
F
= 68A
V
R
= 100V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/µs)
400
800
1200
1600
2000
2400
2800
3200
3600
4000
Q
R
R
(
A
)
I
F
= 103A
V
R
= 100V
T
J
= 25°C
T
J
= 125°C
Fig. 20 - Typical Stored Charge vs. dif/dt
Q
RR
(nC)
Q
RR
(nC)
P1-P3P4-P6P7-P9

AUIRFP4568

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Buy AUIRFP4568
Manufacturer:
Infineon / IR
Description:
MOSFET N-CHANNEL 100+
Lifecycle:
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