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NE1617ADS,118

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30
NE1617A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 20 March 2012 19 of 30
NXP Semiconductors
NE1617A
Temperature monitor for microprocessor systems
[1] Specifications from 40 C to +125 C are guaranteed by design, not production tested.
[2] Guaranteed but not 100 % tested.
[3] Quantization error is not included in specifications for temperature accuracy. For example, if the NE1617A device temperature is exactly
+66.7 C, the ADC may report +66 C, +67 C or +68 C (due to the quantization error plus the 0.5 C offset used for rounding up) and
still be within the guaranteed 1 C error limits for the +60 C to +100 C temperature range.
[4] T
remote
is the junction temperature of the remote diode. See Section 7.1 “Temperature measurement” for remote diode forward voltage
requirements.
Table 14. Characteristics
V
DD
=3.3V; T
amb
=
40
C to +125
C; unless otherwise specified.
[1]
Symbol Parameter Conditions Min Typ Max Unit
ADC and power supply
T
res
temperature resolution monotonicity guaranteed
[2]
8- - bits
T
acc(loc)
local temperature accuracy
[3]
T
amb
=+60C to +100 C-<1 2 C
T
amb
= 40 C to +125 C-<2 3 C
T
acc(rem)
remote temperature
accuracy
[3]
T
remote
=+60C to +100 C
[4]
--3 C
T
remote
= 40 C to +125 C
[4]
--5 C
V
DD
supply voltage 3.0 - 5.5 V
t
conv
conversion time from STOP bit to conversion
complete; both channels
- 125 156 ms
E
f(conv)
conversion rate error percentage error in programmed
rate
25 - +25 %
SMBus interface
V
IH
HIGH-level input voltage STBY, SCLK, SDATA
V
DD
=3V 2.2 - - V
V
DD
=5.5V 2.4 - - V
V
IL
LOW-level input voltage STBY, SCLK, SDATA;
V
DD
=3Vto5.5V
--0.8V
I
sink
sink current logic output LOW;
ALERT, SDATA forced to 0.4 V
6- - mA
I
LOH
HIGH-level output leakage
current
ALERT; forced to 5.5 V - - 1 A
I
I
input current logic inputs forced to V
DD
or GND 2- +2A
NE1617A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 20 March 2012 20 of 30
NXP Semiconductors
NE1617A
Temperature monitor for microprocessor systems
[1] The NE1617A does not include the SMBus time-out capability (t
LOW;SEXT
and t
LOW;MEXT
).
[2] Device operation between 3.0 V and 5.5 V is allowed, but parameters may be outside the limit shown in this table.
Table 15. SMBus interface dynamic characteristics
[1]
V
DD
= 3.0 V to 3.6 V; T
amb
=0
C to +125
C; unless otherwise specified.
[2]
Symbol Parameter Conditions Min Typ Max Unit
V
IH
HIGH-level input voltage STBY, SCLK, SDATA 2.2 - - V
V
IL
LOW-level input voltage STBY, SCLK, SDATA - - 0.8 V
I
OL
logic output LOW sink current ALERT; V
OL
=0.4V 1.0--mA
SDATA; V
OL
=0.6V 6.0--mA
I
IH
HIGH-level input current V
I
=V
DD
1- +1A
I
IL
LOW-level input current V
I
=GND 1- +1A
C
i
input capacitance SCLK, SDATA - 5 - pF
f
SCLK
SCLK operating frequency 0 - 100 kHz
t
LOW
SCLK LOW time 4.7 5.0 - s
t
HIGH
SCLK HIGH time 4.0 5.0 - s
t
BUF
bus free time between a STOP
and START condition
from SDATA STOP
to SDATA START
4.7 - - s
t
HD;STA
hold time (repeated) START
condition
from SDATA START to first SCLK
HIGH-to-LOW transition
4.0 - - s
t
HD;DAT
data hold time from SCLK HIGH-to-LOW transition
to SDATA edges
0--ns
t
SU;DAT
data set-up time from SDATA edges
to SCLK LOW-to-HIGH transition
250--ns
t
SU;STA
set-up time for a repeated
START condition
from SCLK LOW-to-HIGH transition
to restart SDATA
250--ns
t
SU;STO
set-up time for STOP condition from SCLK LOW-to-HIGH transition
to SDATA STOP condition
4.0 - - s
t
f
fall time SCLK and SDATA signals - - 1.0 s
Fig 6. Timing measurements
P S
SCLK
SDATA
002aae777
SP
t
LOW
t
r
t
SU;STO
t
HD;STA
t
HD;DAT
t
f
t
SU;DAT
t
SU;STA
t
HIGH
t
HD;STA
t
BUF
NE1617A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 20 March 2012 21 of 30
NXP Semiconductors
NE1617A
Temperature monitor for microprocessor systems
11.1 Typical performance curves
V
I
= 100 mV
pp
and AC-coupled to D
Fig 7. Temperature error versus printed-circuit board
leakage resistance
Fig 8. Temperature error versus common-mode
noise frequency
V
I
= 100 mV
pp
and AC-coupled to D and D+
Fig 9. Temperature error versus differential mode
noise frequency
Fig 10. Temperature error versus D+ to D
capacitance
leakage resistance (MΩ)
110
2
10
002aab749
0
−10
10
20
temp.
error
(°C)
−20
D+ to GND
D+ to V
DD
002aab747
−2
2
6
temp.
error
(°C)
−6
f (kHz)
110
4
10
3
10 10
2
002aab748
−2
2
6
temp.
error
(°C)
−6
f (kHz)
110
4
10
3
10 10
2
D+ to D− capacitance (nF)
0 1208040
002aab750
−10
0
10
temp.
error
(°C)
−20
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NE1617ADS,118

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Manufacturer:
NXP Semiconductors
Description:
Board Mount Temperature Sensors TEMP SENSOR DIGITAL
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New from this manufacturer.
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