Electrical specifications VN610SP-E
16/27 Doc ID 10889 Rev 5
Figure 13. Overvoltage shutdown Figure 14. I
LIM
vs T
case
Figure 15. Turn-on voltage slope Figure 16. Turn-off voltage slope
Figure 17. On-state resistance vs T
case
Figure 18. On-state resistance vs V
CC
VN610SP-E Application information
Doc ID 10889 Rev 5 17/27
3 Application information
Figure 19. Application schematic
3.1 GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1 Solution 1: a resistor in the ground line (R
GND
only)
This can be used with any type of load.
The following show how to dimension the R
GND
resistor:
1. R
GND
600mV / (I
S(on)max
)
2. R
GND
≥ ( - V
CC
) / (- I
GND
)
where - I
GND
is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device datasheet.
Power dissipation in R
GND
(when V
CC
< 0 during reverse battery situations) is:
P
D
= (- V
CC
)
2
/ R
GND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the
maximum on-state currents of the different devices.
Please note that, if the microprocessor ground is not shared by the device ground, then the
R
GND
produces a shift (I
S(on)max
* R
GND
) in the input thresholds and the status output
values. This shift varies depending on how many devices are ON in the case of several high-
side drivers sharing the same R
GND
.
V
CC
GND
OUTPUT
D
GND
R
GND
D
ld
μ
C
+5V
R
prot
V
GND
INPUT
CURRENT SENSE
R
SENSE
R
prot
Application information VN610SP-E
18/27 Doc ID 10889 Rev 5
If the calculated power dissipation requires the use of a large resistor, or several devices
have to share the same resistor, then ST suggests using solution 2 below.
3.1.2 Solution 2: a diode (D
GND
) in the ground line
A resistor (R
GND
= 1kΩ) should be inserted in parallel to D
GND
if the device is driving an
inductive load. This small signal diode can be safely shared amongst several different HSD.
Also in this case, the presence of the ground network produces a shift (j600mV) in the input
threshold and the status output values if the microprocessor ground is not common with the
device ground. This shift not varies if more than one HSD shares the same diode/resistor
network. Series resistor in INPUT and STATUS lines are also required to prevent that,
during battery voltage transient, the current exceeds the Absolute Maximum Rating. Safest
configuration for unused INPUT pin is to leave them unconnected, while unused SENSE pin
has to be connected to ground pin.
3.2 Load dump protection
D
ld
is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V
CC
maximum DC rating. The same applies if the device is subject to transients on the V
CC
line that are greater than those shown in the ISO T/R 7637/1 table.
3.3 MCU I/O protection
If a ground protection network is used and negative transients are present on the V
CC
line,
the control pins is pulled negative. ST suggests to insert a resistor (R
prot
) in line to prevent
the µC I/O pins from latching up.
The value of these resistors is a compromise between the leakage current of µC and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC
I/Os:
- V
CCpeak
/ I
latchup
R
prot
(V
OHμC
- V
IH
- V
GND
) / I
IHmax
Example
For the following conditions:
V
CCpeak
= - 100V
I
latchup
20mA
V
OHμC
4.5V
5kΩ R
prot
65kΩ.
Recommended values are:
R
prot
= 10kΩ

VN610SP-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers SINGLE HIGH SIDE
Lifecycle:
New from this manufacturer.
Delivery:
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