OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SI1428EDH-T1-GE3

P1-P3P4-P6P7-P9P10-P12
www.vishay.com
4
Document Number: 67825
S11-0861-Rev. A, 02-May-11
Vishay Siliconix
Si1428EDH
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Normalized On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
0.02
0.04
0.06
0.08
0.10
0.0 2.0 4.0 6.0 8.0 10.0
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 3.7 A
T
J
= 125 °C
T
J
= 25 °C
0
5
10
15
20
25
30
Power (W)
Time (s)
10 10000.10.010.001 1001
Source-Drain Diode Forward Voltage
Threshold Voltage
Safe Operating Area, Junction-to-Ambient
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 25 °C
T
J
= 150 °C
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
-Temperature (°C)
I
D
= 250 μA
0.01
0.1
1
10
100
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
10 s
100 ms
Limited by R
DS(on)
*
1 ms
T
Single Pulse
A
= 25 °C
BVDSS Limited
10 ms
100 μs
1 s
DC
Document Number: 67825
S11-0861-Rev. A, 02-May-11
www.vishay.com
5
Vishay Siliconix
Si1428EDH
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Package Limited
Power Derating
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25 50 75 100 125 150
T
F
- Foot Temperature (°C)
Power Dissipation (W)
www.vishay.com
6
Document Number: 67825
S11-0861-Rev. A, 02-May-11
Vishay Siliconix
Si1428EDH
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67825
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=125 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Single Pulse
0.02
0.05
0.2
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
01110
-1
10
-4
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.2
0.1
Duty Cycle = 0.5
0.05
Single Pulse
0.02
P1-P3P4-P6P7-P9P10-P12

SI1428EDH-T1-GE3

Mfr. #:
Buy SI1428EDH-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SI1416EDH-T1-GE3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet