BT151-1000RT,127

IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
T
O
-
2
2
0
A
B
BT151-1000RT
SCR
13 March 2014 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic
package intended for use in applications requiring very high bidirectional blocking voltage
capability, high junction temperature capability and high thermal cycling performance.
2. Features and benefits
High junction operating temperature capability
High thermal cycling performance
Planar passivated for voltage ruggedness and reliability
Very high bidirectional blocking voltage capability
3. Applications
Capacitive Discharge Ignition (CDI)
Crowbar protection
Inrush protection
Motor control
Voltage regulation
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 1000 V
V
RRM
repetitive peak reverse
voltage
- - 1000 V
I
TSM
non-repetitive peak on-
state current
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms; Fig. 4; Fig. 5
- - 120 A
T
j
junction temperature - - 150 °C
I
T(RMS)
RMS on-state current half sine wave; T
mb
≤ 134 °C; Fig. 1;
Fig. 2; Fig. 3
- - 12 A
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C; Fig. 7 - 2 15 mA
NXP Semiconductors
BT151-1000RT
SCR
BT151-1000RT All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 13 March 2014 2 / 11
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
2 A anode
3 G gate
mb A mounting base; connected to
anode
1 2
mb
3
TO-220AB (SOT78)
sym037
A K
G
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT151-1000RT TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage - 1000 V
V
RRM
repetitive peak reverse voltage - 1000 V
I
T(AV)
average on-state current half sine wave; T
mb
≤ 134 °C - 7.5 A
I
T(RMS)
RMS on-state current half sine wave; T
mb
≤ 134 °C; Fig. 1;
Fig. 2; Fig. 3
- 12 A
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms; Fig. 4; Fig. 5
- 120 AI
TSM
non-repetitive peak on-state
current
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
- 132 A
I
2
t I
2
t for fusing
t
p
= 10 ms; SIN - 72
A
2
s
dI
T
/dt rate of rise of on-state current I
T
= 20 A; I
G
= 50 mA; dI
G
/dt = 50 mA/
µs
- 50 A/µs
I
GM
peak gate current - 2 A

BT151-1000RT,127

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
SCRs Thyristor SCR 1KV 13 1A 3-Pin (3+Tab)
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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