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BT151-1000RT,127

P1-P3P4-P6P7-P9P10-P12
NXP Semiconductors
BT151-1000RT
SCR
BT151-1000RT All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 13 March 2014 3 / 11
Symbol Parameter Conditions Min Max Unit
V
RGM
peak reverse gate voltage - 5 V
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
0
3
a
f
7
7
0
5
1
0
1
5
2
0
2
5
3
0
1
0
-
2
1
0
-
1
1
10
s
u
r
g
e
d
u
r
a
t
io
n
(
s
)
I
T
(
R
M
S
)
A
)
f = 50 Hz; T
mb
= 134 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
T
mb
(°C)
-50 1501000 50
003aab828
8
4
12
16
I
T(RMS)
(A)
0
134 °C
Fig. 2. RMS on-state current as a function of mounting
base temperature; maximum values
0
0
3
a a
f
7
7
8
0
5
1
0
1
5
0
2
4
6
8
I
T
(
AV
)
(
A
)
P
t
o
t
(
W
)
a
=1
.
5
7
1
.
9
2
.
2
2
.
8
4
1
5
0
1
4
3
.
5
1
3
7
1
3
0
.
5
T
m
b
(
m
a
x
)
(
o
C
)
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of average on-state current; maximum values
NXP Semiconductors
BT151-1000RT
SCR
BT151-1000RT All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 13 March 2014 4 / 11
003aad203
80
40
120
160
I
TSM
(A)
0
number of cycles
1 10
3
10
2
10
t
p
T
j(init)
= 25 °C max
I
T
I
TSM
t
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
0
0
3
a
a
d
2
0
4
10
10
2
10
3
1
0
-
5
1
0
-
4
1
0
-
3
1
0
-
2
t
p
(
s
)
I
T
S
M
(
A
)
t
p
T
j(init)
= 25 °C max
I
T
I
TSM
t
(1)
t
p
≤ 10 ms
(1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
Fig. 6 - - 1.3 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air - 60 - K/W
NXP Semiconductors
BT151-1000RT
SCR
BT151-1000RT All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 13 March 2014 5 / 11
003aaj936
10
-1
10
-2
1
10
Z
th(j-mb)
(K/W)
10
-3
t
p
(s)
10
-5
1 1010
-1
10
-2
10
-4
10
-3
t
p
t
p
T
P
t
T
δ =
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C; Fig. 7 - 2 15 mA
I
L
latching current V
D
= 12 V; I
G
= 0.1 A; T
j
= 25 °C; Fig. 8 - 10 40 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - 7 20 mA
V
T
on-state voltage I
T
= 23 A; T
j
= 25 °C; Fig. 10 - 1.4 1.75 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
- 0.6 1 VV
GT
gate trigger voltage
V
D
= 1000 V; I
T
= 0.1 A; T
j
= 150 °C;
Fig. 11
0.25 0.4 - V
I
D
off-state current V
D
= 1000 V; T
j
= 150 °C - 0.5 2.5 mA
I
R
reverse current V
R
= 1000 V; T
j
= 150 °C - 0.5 2.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 670 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit; Fig. 12
- 300 - V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 40 A; V
D
= 1000 V; I
G
= 0.1 A;
dI
G
/dt = 5 A/µs; T
j
= 25 °C
- 2 - µs
t
q
commutated turn-off
time
V
DM
= 670 V; T
j
= 150 °C; I
TM
= 20 A;
V
R
= 25 V; (dI
T
/dt)
M
= 30 A/µs; dV
D
/
dt = 50 V/µs; R
GK
= 100 Ω; (V
DM
= 67%
of V
DRM
)
- 70 - µs
P1-P3P4-P6P7-P9P10-P12

BT151-1000RT,127

Mfr. #:
Buy BT151-1000RT,127
Manufacturer:
WeEn Semiconductors
Description:
SCRs Thyristor SCR 1KV 13 1A 3-Pin (3+Tab)
Lifecycle:
New from this manufacturer.
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