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MMRF5017HSR5

P1-P3P4-P6P7-P9P10-P10
MMRF5017HS
1
RF Device Data
NXP Semiconductors
RF Power GaN Transistor
This 125 W RF power GaN transistor is capable of broadband operation from
30 to 2200 MHz and includes input matching for extended bandwidth
performance. With its high gain and high ruggedness , this device is ideally
suited for CW, pulse and broadband RF applications.
This part is characterized and performance is guaranteed for applications
operating in the 30 to 2200 MHz band. There is no guarantee of performance
when this part is used in applications designed outside of these frequencies.
Typical Performance:
V
DD
=50Vdc,T
A
=25C
Frequency
(MHz)
Signal Type
P
out
(W)
G
ps
(dB)
D
(%)
30–940
(1,2)
CW 90 16.0 45.0
520
(1)
CW 125 18.0 59.1
940
(1)
CW 80 18.4 44.0
2200 Pulse
(100 sec, 20% Duty Cycle)
200 17.0 57.0
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type VSWR
P
in
(W)
Test
Voltage
Result
520
(1)
Pulse
(100 sec,
20% Duty Cycle)
> 10:1 at
All Phase
Angles
3.4
(3 dB
Overdrive)
50 No Device
Degradation
1. Measured in 30–940 MHz wideband reference circuit (page 4).
2. The values shown are the minimum measured efficiency performance numbers
across the indicated frequency range.
Features
Advanced GaN on SiC, offering high power density
Decade bandwidth performance
Input matched for extended wideband performance
High ruggedness: > 10:1 VSWR
Typical Applications
Ideal for military end--use applications, including the following:
– Narrowband and multi--octave wideband amplifiers
– Radar
– Jammers
–EMCtesting
Also suitable for commercial applications, including the following:
– Public mobile radios, including emergency service radios
– Industrial, scientific and medical
– Wideband laboratory amplifiers
– Wireless cellular infrastructure
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
Document Number: MMRF5017HS
Rev. 0, 06/2018
NXP Semiconductors
Technical Data
30–2200 MHz, 125 W CW, 50 V
WIDEBAND
RF POWER GaN TRANSISTOR
MMRF5017HS
NI--400S--2S
Note: The backside of the package is the
source terminal for the transistor.
(Top View)
Drain
21
Figure 1. Pin Connections
Gate
2018 NXP B.V.
2
RF Device Data
NXP Semiconductors
MMRF5017HS
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
125 Vdc
Gate--Source Voltage V
GS
–8, 0 Vdc
Operating Voltage V
DD
0to+55 Vdc
Maximum Forward Gate Current @ T
C
=25C I
GMAX
24 mA
Storage Temperature Range T
stg
–65to+150 C
Case Operating Temperature Range T
C
–55to+150 C
Operating Junction Temperature Range T
J
–55to+225 C
Absolute Maximum Channel Temperature
(1)
T
MAX
350 C
Total Device Dissipation @ T
C
=25C
Derate above 25C
P
D
154
0.77
W
W/C
Table 2. Thermal Characteristics
Characteristic
(2)
Symbol Value Unit
Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case
CW: Case Temperature 81C, 80 W CW, 50 Vdc, I
DQ
= 200 mA, 940 MHz
R
JC
(IR) 1.3
(3)
C/W
Thermal Resistance by Finite Element Analysis, Channel--to--Case
Case Temperature 90C, P
D
=96W
R
CHC
(FEA)
1.77
(4)
C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JS--001--2017) 2, passes 2500 V
Charge Device Model (per JS--002--2014) II, passes 200 V
Table 4. Electrical Characteristics (T
A
=25C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
Drain--Source Breakdown Voltage
(V
GS
=–8Vdc,I
D
=20mAdc)
V
(BR)DSS
150 — — Vdc
On Characteristics
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
=20mAdc)
V
GS(th)
–3.8 –3.0 –2.3 Vdc
Gate Quiescent Voltage
(V
DD
=48Vdc,I
D
= 200 mAdc, Measured in Functional Test)
V
GS(Q)
–3.6 –3.1 –2.3 Vdc
Gate--Source Leakage Current
(V
DS
=0Vdc,V
GS
=–5Vdc)
I
GSS
–7.5 — — mAdc
Table 5. Ordering Information
Device Tape and Reel Information Package
MMRF5017HSR5 R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel NI--400S--2S
1. Reliability tests were conducted at 225C. Operation with T
MAX
at 350C will reduce median time to failure.
2. Characterized in 30–940 MHz reference circuit at 940 MHz and 80 W CW output power.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF
and search for AN1955.
4. R
CHC
(FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be estimated by
the expression MTTF (hours) = 10
[A + B/(T + 273)]
, where T is the channel temperature in degrees Celsius, A = –10.3 and B = 8260.
MMRF5017HS
3
RF Device Data
NXP Semiconductors
NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors
Turning the device ON
1. Set V
GS
to –5 V
2. Turn on V
DS
to nominal supply voltage (50 V)
3. Increase V
GS
until I
DS
current is attained
4. Apply RF input power to desired level
Turning the device OFF
1. Turn RF power off
2. Reduce V
GS
downto–5V
3. Reduce V
DS
down to 0 V (Adequate time must be allowed for V
DS
to
reduce to 0 V to prevent severe damage to device.)
4. Turn off V
GS
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MMRF5017HSR5

Mfr. #:
Buy MMRF5017HSR5
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors 50V GaN on Sic 90W CW 3MHz-1GHz
Lifecycle:
New from this manufacturer.
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