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MMRF5017HSR5

P1-P3P4-P6P7-P9P10-P10
4
RF Device Data
NXP Semiconductors
MMRF5017HS
30–940 MHz WIDEBAND REFERENCE CIRCUIT — 2.05.0 (5.1 cm 12.7 cm)
Figure 2. MMRF5017HS Wideband Reference Circuit Component Layout — 30–940 MHz
*C1, C2, C3, C4, C7, C9, C1 1, C12, C13, C14, C16, C17, C18 and C19 are mounted vertically.
L1
C2*
C17*
T1 T2
Q1
C1*
D103193
Rev. 0
R1
L2
C6
C3*
C4*
C7*
C8
C9*
J1
C10
C11*
R3
L3
L4
L7
L6
C16*
C18*
L5
C5
R4
R2
C15
C12*
C19*
C13* C14*
aaa-030768
Table 6. MMRF5017HS Wideband Reference Circuit Component Designations and Values — 30–940 MHz
Part Description Part Number Manufacturer
C1 1500 pF Chip Capacitor ATC700B152JT50XT ATC
C2 100 pF Chip Capacitor ATC800B101JT500XT ATC
C3, C7 39 pF Chip Capacitor ATC800B390JT500XT ATC
C4 680 pF Chip Capacitor ATC800B681JT50XT ATC
C5, C8 2.2 F Chip Capacitor C3225X7R2A225KT TDK
C6 22 F, 25 V Tantalum Capacitor TPSD226M025R0200 AVX
C9 0.1 F Chip Capacitor C1206C104K1RACTU Kemet
C10 220 F, 100 V Electrolytic Capacitor EEV--FK2A221M Panasonic–ECG
C11 220 pF Chip Capacitor ATC100B221JT200XT ATC
C12 2.2 pF Chip Capacitor ATC800B2R2BT500XT ATC
C13, C14, C19 5.6 pF Chip Capacitor ATC800B5R6CT500XT ATC
C15 10 pF Chip Capacitor ATC800B100JT500XT ATC
C16, C18 470 pF Chip Capacitor ATC800B471JT200XT ATC
C17 330 pF Chip Capacitor ATC800B331JT200XT ATC
J1 #16 AWG, Magnetic Wire, Length = 2.5 8074 Belden
L1 270 nH Inductor 0603AF--271XJRU Coilcraft
L2 422 nH inductor 132--18SMJL Coilcraft
L3 240 nH Inductor 0603AF--241XJRU Coilcraft
L4, L5, L6, L7 1.3 H Inductor 4310LC--132KE Coilcraft
Q1 RF Power GaN Transistor MMRF5017HS NXP
R1 51 , 1/2 W Chip Resistor CRCW201051R0JNEF Vishay
R2 10 , 1/4 W Chip Resistor CRCW080510R0FKEA Vishay
R3, R4 100 , 4 W Chip Resistor CW12010T0100GBK ATC
T1, T2 High Power Transformer, 30–1000 MHz, 50 to 12.5 XMT0310B5012 Anaren
PCB Shengyi S1000--2, 0.031,
r
=4.8 D103193 MTL
MMRF5017HS
5
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 30–940 MHz
WIDEBAND REFERENCE CIRCUIT
Figure 3. Power Gain and Drain Efficiency versus
Output Power and Frequency
f, FREQUENCY (MHz)
G
ps
, POWER GAIN (dB)
0
28
30
24
26
5
75
D,
DRAIN EFFICIENCY (%)
200
15
55
65
18
20
22
100 300 400 500
25
35
45
600 700 800 900 1000
16
90 W
G
ps
D
10 W
V
DD
=50Vdc,I
DQ
= 200 mA, CW
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power – 520 MHz
P
out
, OUTPUT POWER (WATTS)
G
ps
, POWER GAIN (dB)
10
24
0
20
22
16
18
5
75
D,
DRAIN EFFICIENCY (%)
40
15
35
45
65
12
14
20 60 160
25
55
80 100 120 140
Figure 5. Power Gain and Drain Efficiency
versus CW Output Power – 940 MHz
P
out
, OUTPUT POWER (WATTS)
G
ps
, POWER GAIN (dB)
14
21
0
19
20
17
18
15
50
D,
DRAIN EFFICIENCY (%)
20
30
45
15
16
100
20
25
40
40 60 80
35
G
ps
D
V
DD
=50Vdc,I
DQ
= 200 mA, CW, f = 520 MHz
D
V
DD
=50Vdc,I
DQ
= 200 mA, CW, f = 940 MHz
90 W
G
ps
6
RF Device Data
NXP Semiconductors
MMRF5017HS
30–940 MHz WIDEBAND REFERENCE CIRCUIT
f
MHz
Z
source
Z
load
20 39.0 + j23.1 11.3–j5.0
30 59.6 – j3.7 11.0–j3.1
50 28.3 – j28.7 11.1–j1.8
70 15.5 – j22.2 11.2–j1.3
90 11.1–j17.3 11.3–j1.1
136 7.9–j11.3 10.7 – j1.4
174 7.0 – j8.9 10.0 – j0.3
360 6.2 – j5.0 11.9–j0.2
440 6.0 – j4.6 11.9–j0.0
520 5.5 – j4.7 12.3 – j0.1
760 2.5 – j4.0 14.4 – j1.2
850 1.7 – j2.9 16.2 – j3.5
940 1.1 – j1.8 15.9 – j7.9
1000 1.0 – j1.1 13.2 – j10.6
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Figure 6. Wideband Series Equivalent Source and Load Impedance — 30–940 MHz
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
50
50
P1-P3P4-P6P7-P9P10-P10

MMRF5017HSR5

Mfr. #:
Buy MMRF5017HSR5
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors 50V GaN on Sic 90W CW 3MHz-1GHz
Lifecycle:
New from this manufacturer.
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