VSKDL240-06S10

VSKDL240, VSKCL240, VSKJL240, VSKEL240 Series
www.vishay.com
Vishay Semiconductors
Revision: 07-Oct-11
1
Document Number: 93164
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Recovery Diodes, 250 A
(MAGN-A-PAK Power Modules)
FEATURES
Fast recovery time characteristics
Electrically isolated base plate
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
3000 V
RMS
isolating voltage
UL approved file E78996
Compliant to RoHS Directive 2002/95/EC
Designed and qualified for industrial level
DESCRIPTION
The VSK.L240 Series of MAGN-A-PAKs uses fast recovery
power diodes in four basic configurations. The
semiconductors are electrically isolated from the metal
base, allowing common heatsinks and compact assemblies
to be built. Application includes power supplies, battery
chargers, welders, motor controls and general industrial
current rectification. These modules are intended for those
applications where fast recovery characteristics are
required.
PRODUCT SUMMARY
I
F(AV)
250 A
Type Modules - Diode, Fast
MAGN-A-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS
VSK.L240
UNITS
S10/S20 S30
I
F(AV)
250 240 A
T
C
100 100 °C
I
F(RMS)
392 377
A
I
FSM
50 Hz 8000 7500
60 Hz 8400 7850
I
2
t
50 Hz 322 280
kA
2
s
60 Hz 294 256
I
2
t 3220 2800 kA
2
s
V
RRM
Range 600 to 2500 V
T
J
Range - 40 to 150 °C
VSKDL240, VSKCL240, VSKJL240, VSKEL240 Series
www.vishay.com
Vishay Semiconductors
Revision: 07-Oct-11
2
Document Number: 93164
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
t
rr
CODE
V
RRM,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
I
RRM
MAXIMUM
AT 150 °C
mA
VSK.L240
06 S10 600 700
50
10 S10 1000 1100
12 S20 1200 1300
14 S20 1400 1500
20 S30 2000 2100
25 S30 2500 2600
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
VSK.L240
UNITS
S10/S20 S30
Maximum average forward current
at case temperature
I
F(AV)
180° conduction, half sine wave
250 240 A
100 100 °C
Maximum RMS forward current I
F(RMS)
As AC switch 392 377
A
Maximum peak, one-cycle forward
non-repetitive, surge current
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
8000 7500
t = 8.3 ms 8400 7850
t = 10 ms
100 % V
RRM
reapplied
6750 6300
t = 8.3 ms 7100 6600
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
322 280
kA
2
s
t = 8.3 ms 294 256
t = 10 ms
100 % V
RRM
reapplied
228 198
t = 8.3 ms 208 181
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 3220 2800 kA
2
s
Low level value of threshold voltage V
F(TO)1
(16.7 % x x I
F(AV)
< I < x I
F(AV)
),
T
J
= T
J
maximum
0.98 0.98
V
High level value of threshold voltage V
F(TO)2
(I > x I
F(AV)
), T
J
= T
J
maximum 1.31 1.31
Low level value of forward slope resistance r
f1
(16.7 % x x I
F(AV)
< I < x I
F(AV)
),
T
J
= T
J
maximum
0.75 0.97
m
High level value of forward slope resistance r
f2
(I > x I
F(AV)
), T
J
= T
J
maximum 0.41 0.60
Maximum forward voltage drop V
FM
I
FM
= 800 A, T
J
= 150 °C, t
p
= 10 ms
Average power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
1.57 1.75 V
VSKDL240, VSKCL240, VSKJL240, VSKEL240 Series
www.vishay.com
Vishay Semiconductors
Revision: 07-Oct-11
3
Document Number: 93164
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT T
J
= 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT T
J
= 150 °C
t
rr
AT 25 % I
RRM
(μs)
I
pk
SQUARE PULSE
(A)
dI/dt
(A/μs)
V
r
(V)
t
rr
AT 25 % I
RRM
(μs)
Q
rr
(μC)
I
r
(A)
S10 1.0
500 100 - 50
2.7 135 100
S20 2.0 3.5 250 145
S30 3.0 3.6 360 200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse leakage current I
RRM
T
J
= 150 °C, leakage current 50 mA
RMS insulation voltage V
INS
50 Hz, circuit to base, all terminals shorted,
25 °C, t = 1 s
3000 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating and
storage temperature range
T
J
, T
Stg
- 40 to 150 °C
Maximum internal thermal resistance,
junction to case per junction
R
thJC
DC operation 0.125
K/W
Thermal resistance,
case to heatsink per module
R
thCS
Mounting surface flat, smooth and greased 0.02
Mounting torque ± 10 %
MAP to heatsink
A mounting compound is recommended
and the torque should be rechecked after a
period of about 3 hours to allow for the
spread of the compound.
4 to 6
Nm
busbar to MAP 8 to 10
Approximate weight
850 g
30 oz.
Case style MAGN-A-PAK
R CONDUCTION PER JUNCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.008 0.007
T
J
= T
J
maximum K/W
120° 0.010 0.011
90° 0.013 0.015
60° 0.019 0.020
30° 0.032 0.033
I
FM
t
rr
di
dt
I
RM(REC)
Q
rr
t

VSKDL240-06S10

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 600 Volt 250 Amp Common Cathode
Lifecycle:
New from this manufacturer.
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